Realization of topological Mott insulator in a twisted bilayer graphene lattice model
文献类型：期刊论文
| 作者 | Chen, Bin-Bin; Liao, Yuan Da3,4,5; Chen, Ziyu; Vafek, Oskar6,7; Kang, Jian8,9; Li, Wei10 ; Meng, Zi Yang1,2
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| 刊名 | NATURE COMMUNICATIONS
 |
| 出版日期 | 2021 |
| 卷号 | 12期号:1页码:5480 |
| 关键词 | MAGIC-ANGLE LANDAU-LEVELS TRANSITIONS CASCADE |
| DOI | 10.1038/s41467-021-25438-1 |
| 英文摘要 | Magic-angle twisted bilayer graphene has recently become a thriving material platform realizing correlated electron phenomena taking place within its topological flat bands. Several numerical and analytical methods have been applied to understand the correlated phases therein, revealing some similarity with the quantum Hall physics. In this work, we provide a Mott-Hubbard perspective for the TBG system. Employing the large-scale density matrix renormalization group on the lattice model containing the projected Coulomb interactions only, we identify a first-order quantum phase transition between the insulating stripe phase and the quantum anomalous Hall state with the Chern number of +/- 1. Our results not only shed light on the mechanism of the quantum anomalous Hall state discovered at three-quarters filling, but also provide an example of the topological Mott insulator, i.e., the quantum anomalous Hall state in the strong coupling limit. |
| 学科主题 | Science & Technology - Other Topics |
| 语种 | 英语 |
| 源URL | [http://ir.itp.ac.cn/handle/311006/27458]  |
| 专题 | 理论物理研究所_理论物理所1978-2010年知识产出 |
| 作者单位 | 1.Beihang Univ, Sch Phys, Beijing 100191, Peoples R China 2.Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Peoples R China 3.Univ Hong Kong, Joint Inst Theoret & Computat Phys, HKU UCAS, Pokfulam Rd, Hong Kong, Peoples R China 4.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China 5.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China 6.Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100190, Peoples R China 7.Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA 8.Natl High Magnet Field Lab, Tallahassee, FL 32310 USA 9.Soochow Univ, Sch Phys Sci & Technol, Suzhou 215006, Peoples R China 10.Soochow Univ, Inst Adv Study, Suzhou 215006, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, Bin-Bin,Liao, Yuan Da,Chen, Ziyu,et al. Realization of topological Mott insulator in a twisted bilayer graphene lattice model[J]. NATURE COMMUNICATIONS,2021,12(1):5480. |
| APA | Chen, Bin-Bin.,Liao, Yuan Da.,Chen, Ziyu.,Vafek, Oskar.,Kang, Jian.,...&Meng, Zi Yang.(2021).Realization of topological Mott insulator in a twisted bilayer graphene lattice model.NATURE COMMUNICATIONS,12(1),5480. |
| MLA | Chen, Bin-Bin,et al."Realization of topological Mott insulator in a twisted bilayer graphene lattice model".NATURE COMMUNICATIONS 12.1(2021):5480. |
入库方式： OAI收割
来源：理论物理研究所
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