中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 长春光学精密机械与物理研究所
  3. 中国科学院长春光学精密机械与物理研究所
Beam quality improvement of high-power semiconductor lasers using laterally inhomogeneous waveguides

文献类型：期刊论文

作者Miah, M. J.; Strohmaier, S.; Urban, G.; Bimberg, D.
刊名Applied Physics Letters
出版日期2018
卷号113期号:22页码:5
关键词mode filamentation Physics
ISSN号0003-6951
DOI10.1063/1.5054645
英文摘要High-brightness vertical broad-area edge-emitting (HiBBEE) semiconductor lasers in the 1060 nm wavelength range with excellent beam quality in both lateral and vertical directions are presented. An approach to modify the thresholds of the transverse lateral modes of ridge-waveguide (RW) lasers is investigated. It has been experimentally shown that inhomogeneities in both sides of the ridges increase optical losses of the higher-order lateral modes as compared to the fundamental mode. The resulting enhancement in the contrast of the optical losses favors the emission of the fundamental mode and improves the beam quality. Reference RW HiBBEE lasers with a 15 mu m wide conventional ridge and a 2.0 mm long cavity provide laterally multi-lateral mode emission which is typical for RW lasers with such wide and homogeneous ridges. On the other hand, RW HiBBEE lasers with triangular-shaped corrugations in both sides of 15 mu m wide ridges provide single-lateral mode emission across a wide current range and improve the lateral M-2 factor by more than a factor of 2 in the investigated current range. The corrugated RW HiBBEE lasers provide an almost 2 times higher brightness than the reference RW lasers. Published by AIP Publishing.
源URL[http://ir.ciomp.ac.cn/handle/181722/60584]  
专题中国科学院长春光学精密机械与物理研究所
推荐引用方式
GB/T 7714		 Miah, M. J.,Strohmaier, S.,Urban, G.,et al. Beam quality improvement of high-power semiconductor lasers using laterally inhomogeneous waveguides[J]. Applied Physics Letters,2018,113(22):5.
APA Miah, M. J.,Strohmaier, S.,Urban, G.,&Bimberg, D..(2018).Beam quality improvement of high-power semiconductor lasers using laterally inhomogeneous waveguides.Applied Physics Letters,113(22),5.
MLA Miah, M. J.,et al."Beam quality improvement of high-power semiconductor lasers using laterally inhomogeneous waveguides".Applied Physics Letters 113.22(2018):5.

入库方式： OAI收割

来源：长春光学精密机械与物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。