Investigation of regime switching from mode locking to Q-switching in a 2 um InGaSb GaAsSb quantum well laser
文献类型：期刊论文
| 作者 | Li, X.; Wang, H.; Qiao, Z. L.; Guo, X.; Wang, W. J.; Ng, G. I.; Zhang, Y. ; Xu, Y. Q.; Niu, Z. C.; Tong, C. Z.
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| 刊名 | Optics Express
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| 出版日期 | 2018 |
| 卷号 | 26期号:7页码:8289-8295 |
| ISSN号 | 1094-4087 |
| 关键词 | saturable absorber dot lasers femtosecond sesams Optics |
| DOI | 10.1364/oe.26.008289 |
| 英文摘要 | A two-section InGaSb/AlGaAsSb single quantum well (SQW) laser emitting at 2 mu m is presented. By varying the absorber bias voltage with a fixed gain current at 130 mA, passive mode locking at similar to 18.40 GHz, Q-switched mode locking, and passive Q-switching are observed in this laser. In the Q-switched mode locking regimes, the Q-switched RF signal and mode locked RF signal coexist, and the Q-switched lasing and mode-locked lasing happen at different wavelengths. This is the first observation of these three pulsed working regimes in a GaSb-based diode laser. An analysis of the regime switching mechanism is given based on the interplay between the gain saturation and the saturable absorption. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/60705]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Li, X.,Wang, H.,Qiao, Z. L.,et al. Investigation of regime switching from mode locking to Q-switching in a 2 um InGaSb GaAsSb quantum well laser[J]. Optics Express,2018,26(7):8289-8295. |
| APA | Li, X..,Wang, H..,Qiao, Z. L..,Guo, X..,Wang, W. J..,...&Liu, C. Y..(2018).Investigation of regime switching from mode locking to Q-switching in a 2 um InGaSb GaAsSb quantum well laser.Optics Express,26(7),8289-8295. |
| MLA | Li, X.,et al."Investigation of regime switching from mode locking to Q-switching in a 2 um InGaSb GaAsSb quantum well laser".Optics Express 26.7(2018):8289-8295. |
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