Molecular gated-AlGaNGaN high electron mobility transistor for pH detection
文献类型：期刊论文
| 作者 | Ding, X. Z.; Yang, S.; Miao, B.; Gu, L.; Gu, Z. Q.; Zhang, J.; Wu, B. J.; Wang, H.; Wu, D. M.; Li, J. D. |
| 刊名 | Analyst
 |
| 出版日期 | 2018 |
| 卷号 | 143期号:12页码:2784-2789 |
| 关键词 | field-effect transistors gan surfaces sensors ion deposition stability insulator films acid Chemistry |
| ISSN号 | 0003-2654 |
| DOI | 10.1039/c8an00032h |
| 英文摘要 | A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection. The sensing surface of the sensor was modified with 3-aminopropyltriethoxysilane to provide amphoteric amine groups, which would play the role of receptors for pH detection. On modification with 3-aminopropyltriethoxysilane, the transistor exhibits good chemical stability in hydrochloric acid solution and is sensitive for pH detection. Thus, our molecular gated-AlGaN/GaN high electron mobility transistor acheived good electrical performances such as chemical stability (remained stable in hydrochloric acid solution), good sensitivity (37.17 mu A/pH) and low hysteresis. The results indicate a promising future for high-quality sensors for pH detection. |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/60727]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Ding, X. Z.,Yang, S.,Miao, B.,et al. Molecular gated-AlGaNGaN high electron mobility transistor for pH detection[J]. Analyst,2018,143(12):2784-2789. |
| APA | Ding, X. Z..,Yang, S..,Miao, B..,Gu, L..,Gu, Z. Q..,...&Li, J. D..(2018).Molecular gated-AlGaNGaN high electron mobility transistor for pH detection.Analyst,143(12),2784-2789. |
| MLA | Ding, X. Z.,et al."Molecular gated-AlGaNGaN high electron mobility transistor for pH detection".Analyst 143.12(2018):2784-2789. |
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