Overwhelming coexistence of negative differential resistance effect and RRAM
文献类型：期刊论文
| 作者 | Guo, T.; Sun, B. ; Zhou, Y.; Zhao, H. B.; Lei, M.; Zhao, Y.
|
| 刊名 | Physical Chemistry Chemical Physics
 |
| 出版日期 | 2018 |
| 卷号 | 20期号:31页码:20635-20640 |
| 关键词 | resistive switching memories film nanoparticles mechanisms filaments devices Chemistry Physics |
| ISSN号 | 1463-9076 |
| DOI | 10.1039/c8cp03492c |
| 英文摘要 | An electronic cell that possesses synchronously multi-physical properties is of great importance in the applications of multifunctional electronic devices. In this study, an overwhelming coexistence of negative differential resistance (NDR) effect and resistive switching (RS) memory behavior at room temperature was observed based on Ag/Cu2ZnSnSe4 (CZTSe)/Mo devices. The long retention time of approximate to 10(4) s and high HRS/LRS resistance ratio of approximate to 215 can be achieved, indicating that our devices possess excellent resistance random access memory (RRAM). Moreover, strong NDR behavior was observed at room temperature, which provides a great potential application in advanced electronic devices. Finally, the combined physical model of conductive filament and Schottky barrier reinstallment is demonstrated to explain the coexistence phenomenon. Thus, in this, study we propose a new strategy for preparing a multifunctional electronic device with multiple physical attributes in the future. |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/60760]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Guo, T.,Sun, B.,Zhou, Y.,et al. Overwhelming coexistence of negative differential resistance effect and RRAM[J]. Physical Chemistry Chemical Physics,2018,20(31):20635-20640. |
| APA | Guo, T.,Sun, B.,Zhou, Y.,Zhao, H. B.,Lei, M.,&Zhao, Y..(2018).Overwhelming coexistence of negative differential resistance effect and RRAM.Physical Chemistry Chemical Physics,20(31),20635-20640. |
| MLA | Guo, T.,et al."Overwhelming coexistence of negative differential resistance effect and RRAM".Physical Chemistry Chemical Physics 20.31(2018):20635-20640. |
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