Photoelectric Characteristics of Micro Flip-Chip AlGaInP Light Emitting Diode Array
文献类型：期刊论文
| 作者 | Ban, Zhang; Liang, Jingqiu ; Lu, Jinguang; Li, Yang
|
| 刊名 | Guangxue Xuebao/Acta Optica Sinica
 |
| 出版日期 | 2018 |
| 卷号 | 38期号:9 |
| 关键词 | Flip chip devices Aluminum alloys Copper Diodes Energy utilization Gallium alloys Heat convection Heat resistance III-V semiconductors Indium alloys Light emitting diodes Microchannels Numerical methods Optical devices Photoelectricity Polydimethylsiloxane Semiconductor alloys Silicones Temperature |
| ISSN号 | 2532239 |
| DOI | 10.3788/AOS201838.0923001 |
| 英文摘要 | In order to improve the energy utilization of red LED array devices, we study the photoelectric characteristics of flip-chip AlGaInP-based light emitting diode (LED) array device. Firstly, the light output power characteristics of AlGaInP-based LED with vertical type and flip-chip type structures are tested and compared with each other. The results show that the light output power of flip-chip LED is higher than that of the vertical LED. Then, a model to calculate the output power of flip-chip LED array is proposed, which is used to calculate the relationship between light output power, ambient temperature and base thermal resistance. The results reveal that with the increase of the base thermal resistance and ambient temperature, the output power of the LED array device decreases, the injection current at saturation shifts forward, and the photoelectric performance of LED array decreases. The 66 flip-chip AlGaInP-based LED array device is prepared using the transfer method. The testing results are consistent with the theoretical predictions. Finally, the numerical relationships between the thermal resistance of Cu and polydimethylsiloxane (PDMS) with different basement structures and ambient conditions are analyzed by finite element method. The results show that the heat dissipation capacity of Cu is relatively uniform and its thermal resistance is not sensitive to the structure and the air convection rate. However, for PDMS materials, the thermal resistance is relatively large and can be effectively reduced by optimizing its structure and increasing the air convection rate, thereby improve the photoelectric performance of the micro LED array device. 2018, Chinese Lasers Press. All right reserved. |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/60767]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Ban, Zhang,Liang, Jingqiu,Lu, Jinguang,et al. Photoelectric Characteristics of Micro Flip-Chip AlGaInP Light Emitting Diode Array[J]. Guangxue Xuebao/Acta Optica Sinica,2018,38(9). |
| APA | Ban, Zhang,Liang, Jingqiu,Lu, Jinguang,&Li, Yang.(2018).Photoelectric Characteristics of Micro Flip-Chip AlGaInP Light Emitting Diode Array.Guangxue Xuebao/Acta Optica Sinica,38(9). |
| MLA | Ban, Zhang,et al."Photoelectric Characteristics of Micro Flip-Chip AlGaInP Light Emitting Diode Array".Guangxue Xuebao/Acta Optica Sinica 38.9(2018). |
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