中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Reversible manipulation of lattice defects in single-crystal SnO2 microrod by applying mechanical stress and voltage

文献类型:期刊论文

作者Sakurai, Makoto; Liu, Kewei; Aono, Masakazu
刊名Journal of Applied Physics
出版日期2018
卷号125期号:8
关键词Semiconducting tin compounds Defects Single crystals Transmission electron microscopy
ISSN号218979
DOI10.1063/1.5053837
英文摘要We report a reversible transition between semiconducting and insulating states in a single-crystal SnO2 microrod device through creation and healing of lattice defects by applying mechanical stress and voltage. The process of creating lattice defects by using mechanical stress is investigated using transmission electron microscope and photoluminescence observations. The results reveal the presence of slip planes and non-volatile lattice defects. The healing process is analyzed through the dynamic response of the current to the pulse voltage applied to the ends of the microrod. It is found that there are fast and slow healing processes. The fast process is due to field-induced reduction of the trapping potential barrier, and the slow one is due to Joule heating. The reversible and nonlinear nature of the defect manipulation will open new avenues of innovation different from those of conventional technology, especially for the mechanical design of touch interfaces. 2018 Author(s).
源URL[http://ir.ciomp.ac.cn/handle/181722/60789]  
专题中国科学院长春光学精密机械与物理研究所
推荐引用方式
GB/T 7714
Sakurai, Makoto,Liu, Kewei,Aono, Masakazu. Reversible manipulation of lattice defects in single-crystal SnO2 microrod by applying mechanical stress and voltage[J]. Journal of Applied Physics,2018,125(8).
APA Sakurai, Makoto,Liu, Kewei,&Aono, Masakazu.(2018).Reversible manipulation of lattice defects in single-crystal SnO2 microrod by applying mechanical stress and voltage.Journal of Applied Physics,125(8).
MLA Sakurai, Makoto,et al."Reversible manipulation of lattice defects in single-crystal SnO2 microrod by applying mechanical stress and voltage".Journal of Applied Physics 125.8(2018).

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。