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Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si
文献类型：期刊论文
| 作者 | Sun, Y.; Zhou, K.; Feng, M. X.; Li, Z. C.; Zhou, Y. ; Sun, Q.; Liu, J. P.; Zhang, L. Q.; Li, D. Y.; Sun, X. J.
|
| 刊名 | Light-Science & Applications
 |
| 出版日期 | 2018 |
| 卷号 | 7页码:6 |
| 关键词 | x-ray-diffraction high-power gan dislocation relaxation films Optics |
| ISSN号 | 2047-7538 |
| DOI | 10.1038/s41377-018-0008-y |
| 英文摘要 | Current laser-based display and lighting applications are invariably using blue laser diodes (LDs) grown on free-standing GaN substrates, which are costly and smaller in size compared with other substrate materials.(1-3) Utilizing less expensive and large-diameter Si substrates for hetero-epitaxial growth of indium gallium nitride/gallium nitride (InGaN/GaN) multiple quantum well (MQW) structure can substantially reduce the cost of blue LDs and boost their applications. To obtain a high crystalline quality crack-free GaN thin film on Si for the subsequent growth of a blue laser structure, a hand-shaking structure was formed by inserting Al-composition step down-graded AlN/AlxGa1-xN buffer layers between GaN and Si substrate. Thermal degradation in InGaN/GaN blue MQWs was successfully suppressed with indium-rich clusters eliminated by introducing hydrogen during the growth of GaN quantum barriers (QBs) and lowering the growth temperature for the p-type AlGaN/GaN superlattice optical cladding layer. A continuous-wave (CW) electrically pumped InGaN/GaN quantum well (QW) blue (450 nm) LD grown on Si was successfully demonstrated at room temperature (RT) with a threshold current density of 7.8 kA/cm(2) |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/60796]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Sun, Y.,Zhou, K.,Feng, M. X.,et al. Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si[J]. Light-Science & Applications,2018,7:6. |
| APA | Sun, Y..,Zhou, K..,Feng, M. X..,Li, Z. C..,Zhou, Y..,...&Yang, H..(2018).Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si.Light-Science & Applications,7,6. |
| MLA | Sun, Y.,et al."Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si".Light-Science & Applications 7(2018):6. |
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