Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si
文献类型：期刊论文
| 作者 | Feng, M. X.; Li, Z. C.; Wang, J. ; Zhou, R.; Sun, Q.; Sun, X. J.; Li, D. B.; Gao, H. W.; Zhou, Y.; Zhang, S. M.
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| 刊名 | Acs Photonics
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| 出版日期 | 2018 |
| 卷号 | 5期号:3页码:699-704 |
| 关键词 | AlGaN near-ultraviolet laser Si substrate stress defect light-emitting-diodes gan efficiency Science & Technology - Other Topics Materials Science Optics Physics |
| ISSN号 | 2330-4022 |
| DOI | 10.1021/acsphotonics.7b01215 |
| 英文摘要 | This letter reports a successful fabrication of room-temperature electrically injected AlGaN-based near ultraviolet laser diode grown on Si. An Al-composition step down-graded AlN/AlGaN multilayer buffer was carefully engineered to not only tackle the huge difference in the coefficient of thermal expansion between AlGaN template and Si substrate, but also reduce the threading dislocation density caused by the large lattice mismatch. On top of the crack-free n-AlGaN template, high quality InGaN/AlGaN quantum wells were grown, sandwiched by waveguide and optical cladding layers, for the fabrication of edge-emitting laser diode. A dramatic narrowing of the electroluminescence spectral line width, an elongated far-field pattern, and a clear discontinuity in the slope of light output power plotted as a function of the injection current provide an unambiguous evidence of lasing. |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/60797]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Feng, M. X.,Li, Z. C.,Wang, J.,et al. Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si[J]. Acs Photonics,2018,5(3):699-704. |
| APA | Feng, M. X..,Li, Z. C..,Wang, J..,Zhou, R..,Sun, Q..,...&Yang, H..(2018).Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si.Acs Photonics,5(3),699-704. |
| MLA | Feng, M. X.,et al."Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si".Acs Photonics 5.3(2018):699-704. |
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