Electrically excited hot-electron dominated fluorescent emitters using individual Ga-doped ZnO microwires via metal quasiparticle film decoration
文献类型：期刊论文
| 作者 | Liu, Y.; Jiang, M. M.; Zhang, Z. Z.; Li, B. H.; Zhao, H. F.; Shan, C. X.; Shen, D. Z. |
| 刊名 | Nanoscale
 |
| 出版日期 | 2018 |
| 卷号 | 10期号:12页码:5678-5688 |
| 关键词 | surface-plasmon light-emission charge-transfer transport aluminum photoluminescence heterojunctions resonances generation breakdown Chemistry Science & Technology - Other Topics Materials Science Physics |
| ISSN号 | 2040-3364 |
| DOI | 10.1039/c8nr00715b |
| 英文摘要 | The generation of hot electrons from metal nanostructures through plasmon decay provided a direct interfacial charge transfer mechanism, which no longer suffers from the barrier height restrictions observed for metal/semiconductor interfaces. Metal plasmon-mediated energy conversion with higher efficiency has been proposed as a promising alternative to construct novel optoelectronic devices, such as photodetectors, photovoltaic and photocatalytic devices, etc. However, the realization of the electrically-driven generation of hot electrons, and the application in light-emitting devices remain big challenges. Here, hybrid architectures comprising individual Ga-doped ZnO (ZnO:Ga) microwires via metal quasiparticle film decoration were fabricated. The hottest spots could be formed towards the center of the wires, and the quasiparticle films were converted into physically isolated nanoparticles by applying a bias onto the wires. Thus, the hot electrons became spatially localized towards the hottest regions, leading to a release of energy in the form of emitting photons. By adjusting the sputtering times and appropriate alloys, such as Au and Ag, wavelength-tunable emissions could be achieved. To exploit the EL emission characteristics, metal plasmons could be used as active elements to mediate the generation of hot electrons from metal nanostructures, which are located in the light-emitting regions, followed by injection into ZnO:Ga microwire-channels; thus, the production of plasmon decay-induced hot-electrons could function as an efficient approach to dominate emission wavelengths. Therefore, by introducing metal nanostructure decoration, individual ZnO:Ga microwires can be used to construct wavelength-tunable fluorescent emitters. The hybrid architectures of metal-ZnO micro/nanostructures offer a fantastic candidate to broaden the potential applications of semiconducting optoelectronic devices, such as photovoltaic devices, photodetectors, optoelectronic sensors, etc. |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/60974]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Liu, Y.,Jiang, M. M.,Zhang, Z. Z.,et al. Electrically excited hot-electron dominated fluorescent emitters using individual Ga-doped ZnO microwires via metal quasiparticle film decoration[J]. Nanoscale,2018,10(12):5678-5688. |
| APA | Liu, Y..,Jiang, M. M..,Zhang, Z. Z..,Li, B. H..,Zhao, H. F..,...&Shen, D. Z..(2018).Electrically excited hot-electron dominated fluorescent emitters using individual Ga-doped ZnO microwires via metal quasiparticle film decoration.Nanoscale,10(12),5678-5688. |
| MLA | Liu, Y.,et al."Electrically excited hot-electron dominated fluorescent emitters using individual Ga-doped ZnO microwires via metal quasiparticle film decoration".Nanoscale 10.12(2018):5678-5688. |
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