Electronic Level Alignment at an Indium Tin OxidePbI2 Interface and Its Applications for Organic Electronic Devices
文献类型：期刊论文
| 作者 | Song, Q. G.; Lin, T.; Sun, X.; Chu, B.; Su, Z. S.; Yang, H. S.; Li, W. L.; Lee, C. S. |
| 刊名 | Acs Applied Materials & Interfaces
 |
| 出版日期 | 2018 |
| 卷号 | 10期号:10页码:8909-8916 |
| 关键词 | lead iodide n-type semiconductor anode buffer layer organic electronic devices light-emitting-diodes near-infrared photodetectors field-effect transistors transition-metal oxides hole-injection layer solar-cells photovoltaic cells buffer layer delayed fluorescence spectral response Science & Technology - Other Topics Materials Science |
| ISSN号 | 1944-8244 |
| DOI | 10.1021/acsami.7b19376 |
| 英文摘要 | The electronic level alignment at the indium tin oxide (ITO)/PbI2 interface is investigated by an ultraviolet photoelectron spectroscopy. An n-type conductivity property is found for PbI2 as well as a downward shift energy level at the ITO/PbI2 interface. These indicate that PbI2 can be used as an anode buffer layer for organic electronic devices. The power conversion efficiency of the organic solar cell based on tetraphenyldibenzoperiflanthene/C-70 planar heterojunction is dramatically increased from 1.05 to 3.82%. Meanwhile, the thermally activated delayed fluorescence organic light-emitting diode based on 4,4',4 ''-tri(N-carbazolyptriphenylamine-((1,3,5-triazine-2,4,6-triyl)tris(benzene-3,1-diyl))tris(diphenylphosphine oxide) shows a significantly reduced turn-on voltage and enhanced power efficiency from 6.26 to 18.60 lm/W. The improved performance is attributed to the high hole injection/extraction efficiency at the ITO/PbI2 interface. Besides, the near-infrared (NIR) absorption of lead phthalocyanine (PbPc)-based NIR organic photodetector (NIR-OPD) is dramatically increased, indicating that the PbI2 layer can also be used as a template layer for the growth of the triclinic phase of PbPc. As a result, the optimized device shows an external quantum efficiency of 26.7% and a detectivity of 9.96 x 10(11) jones at 900 nm, which are among the highest ones reported for organic NIR-OPDs. |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/60975]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Song, Q. G.,Lin, T.,Sun, X.,et al. Electronic Level Alignment at an Indium Tin OxidePbI2 Interface and Its Applications for Organic Electronic Devices[J]. Acs Applied Materials & Interfaces,2018,10(10):8909-8916. |
| APA | Song, Q. G..,Lin, T..,Sun, X..,Chu, B..,Su, Z. S..,...&Lee, C. S..(2018).Electronic Level Alignment at an Indium Tin OxidePbI2 Interface and Its Applications for Organic Electronic Devices.Acs Applied Materials & Interfaces,10(10),8909-8916. |
| MLA | Song, Q. G.,et al."Electronic Level Alignment at an Indium Tin OxidePbI2 Interface and Its Applications for Organic Electronic Devices".Acs Applied Materials & Interfaces 10.10(2018):8909-8916. |
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