Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs-GaAs quantum well structure
文献类型：期刊论文
| 作者 | Jia, Y.; Yu, Q. N.; Li, F. ; Wang, M. Q.; Lu, W.; Zhang, J.; Zhang, X.; Ning, Y. Q.; Wu, J.
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| 刊名 | Chinese Optics Letters
 |
| 出版日期 | 2018 |
| 卷号 | 16期号:1页码:5 |
| 关键词 | semiconductor-lasers midinfrared laser segregation emission Optics |
| ISSN号 | 1671-7694 |
| DOI | 10.3788/col201816.011402 |
| 英文摘要 | In this Letter, the loss and gain characteristics of an unconventional InxGa1-xAs/GaAs asymmetrical step well structure consisting of variable indium contents of InxGa1-xAs materials are measured and analyzed for the first time, to the best of our knowledge. This special well structure is formed based on the indium-rich effect from the material growth process. The loss and gain are obtained by optical pumping and photoluminescence (PL) spectrum measurement at dual facets of an edge-emitting device. Unlike conventional quasi-rectangle wells, the asymmetrical step well may lead to a hybrid strain configuration containing both compressive and tensile strains and, thus, special loss and gain characteristics. The results will be very helpful in the development of multiple wavelength InGaAs-based semiconductor lasers. |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/60985]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Jia, Y.,Yu, Q. N.,Li, F.,et al. Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs-GaAs quantum well structure[J]. Chinese Optics Letters,2018,16(1):5. |
| APA | Jia, Y..,Yu, Q. N..,Li, F..,Wang, M. Q..,Lu, W..,...&Wu, J..(2018).Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs-GaAs quantum well structure.Chinese Optics Letters,16(1),5. |
| MLA | Jia, Y.,et al."Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs-GaAs quantum well structure".Chinese Optics Letters 16.1(2018):5. |
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