High-power GaSb-based microstripe broad-area lasers
文献类型:期刊论文
作者 | Lu, Z. F.; Wang, L. J.; Zhang, Y.; Shu, S. L.; Tian, S. C.; Tong, C. Z.; Hou, G. Y.; Chai, X. L.; Xu, Y. Q.; Ni, H. Q. |
刊名 | Applied Physics Express |
出版日期 | 2018 |
卷号 | 11期号:3页码:4 |
ISSN号 | 1882-0778 |
关键词 | low-beam divergence mu-m semiconductor-lasers diode-lasers wave-guide field Physics |
DOI | 10.7567/apex.11.032702 |
英文摘要 | A simple and effective approach based on the microstripe broad-area (MSBA) structure was proposed, and high-efficiency and high-power mid-infrared GaSb-based quantum well lasers were demonstrated. It was shown that the MSBA structure can effectively suppress the lateral current leakage and improve the temperature behavior of GaSb lasers. Compared with the conventional broad-area structure, the energy conversion efficiency of MSBA lasers was more than threefold and threshold current density decreased above 50%. High characteristic temperature and high beam quality were realized. (C) 2018 The Japan Society of Applied Physics |
源URL | [http://ir.ciomp.ac.cn/handle/181722/61021] |
专题 | 中国科学院长春光学精密机械与物理研究所 |
推荐引用方式 GB/T 7714 | Lu, Z. F.,Wang, L. J.,Zhang, Y.,et al. High-power GaSb-based microstripe broad-area lasers[J]. Applied Physics Express,2018,11(3):4. |
APA | Lu, Z. F..,Wang, L. J..,Zhang, Y..,Shu, S. L..,Tian, S. C..,...&Wang, L. J..(2018).High-power GaSb-based microstripe broad-area lasers.Applied Physics Express,11(3),4. |
MLA | Lu, Z. F.,et al."High-power GaSb-based microstripe broad-area lasers".Applied Physics Express 11.3(2018):4. |
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