中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High-power GaSb-based microstripe broad-area lasers

文献类型:期刊论文

作者Lu, Z. F.; Wang, L. J.; Zhang, Y.; Shu, S. L.; Tian, S. C.; Tong, C. Z.; Hou, G. Y.; Chai, X. L.; Xu, Y. Q.; Ni, H. Q.
刊名Applied Physics Express
出版日期2018
卷号11期号:3页码:4
ISSN号1882-0778
关键词low-beam divergence mu-m semiconductor-lasers diode-lasers wave-guide field Physics
DOI10.7567/apex.11.032702
英文摘要A simple and effective approach based on the microstripe broad-area (MSBA) structure was proposed, and high-efficiency and high-power mid-infrared GaSb-based quantum well lasers were demonstrated. It was shown that the MSBA structure can effectively suppress the lateral current leakage and improve the temperature behavior of GaSb lasers. Compared with the conventional broad-area structure, the energy conversion efficiency of MSBA lasers was more than threefold and threshold current density decreased above 50%. High characteristic temperature and high beam quality were realized. (C) 2018 The Japan Society of Applied Physics
源URL[http://ir.ciomp.ac.cn/handle/181722/61021]  
专题中国科学院长春光学精密机械与物理研究所
推荐引用方式
GB/T 7714
Lu, Z. F.,Wang, L. J.,Zhang, Y.,et al. High-power GaSb-based microstripe broad-area lasers[J]. Applied Physics Express,2018,11(3):4.
APA Lu, Z. F..,Wang, L. J..,Zhang, Y..,Shu, S. L..,Tian, S. C..,...&Wang, L. J..(2018).High-power GaSb-based microstripe broad-area lasers.Applied Physics Express,11(3),4.
MLA Lu, Z. F.,et al."High-power GaSb-based microstripe broad-area lasers".Applied Physics Express 11.3(2018):4.

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

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