中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Improved performance of CsPbBr3 perovskite light-emitting devices by both boundary and interface defects passivation

文献类型:期刊论文

作者Song, L.; Guo, X. Y.; Hu, Y. S.; Lv, Y.; Lin, J.; Fan, Y.; Zhang, N.; Liu, X. Y.
刊名Nanoscale
出版日期2018
卷号10期号:38页码:18315-18322
关键词hybrid perovskite inorganic perovskites quantum dots diodes efficient voltage films Chemistry Science & Technology - Other Topics Materials Science Physics
ISSN号2040-3364
DOI10.1039/c8nr06311g
英文摘要Significantly enhanced luminance and current efficiency for inorganic light-emitting devices have been obtained by tetrabutylammonium bromide (TBAB) additive into perovskite precursors. Reduced nonradiative defects primarily passivated by TBAB and increased exciton binding energy are responsible for improvement of PeLED performance. By employing a TBAB-treated interfacial layer, interface defects are reduced and it results in further promotion of electroluminescence performance of PeLED, including turn-on voltage of 2.6 V, brightness as high as 67300 cd m(-2), current efficiency of 22.5 cd A(-1) and external quantum efficiency of 6.28%. Our results shed light on optimization of inorganic PeLEDs by focusing on the removal of defects both at the grain boundaries and the interfaces between carrier transport layers and perovskite emitting layers.
源URL[http://ir.ciomp.ac.cn/handle/181722/61029]  
专题中国科学院长春光学精密机械与物理研究所
推荐引用方式
GB/T 7714
Song, L.,Guo, X. Y.,Hu, Y. S.,et al. Improved performance of CsPbBr3 perovskite light-emitting devices by both boundary and interface defects passivation[J]. Nanoscale,2018,10(38):18315-18322.
APA Song, L..,Guo, X. Y..,Hu, Y. S..,Lv, Y..,Lin, J..,...&Liu, X. Y..(2018).Improved performance of CsPbBr3 perovskite light-emitting devices by both boundary and interface defects passivation.Nanoscale,10(38),18315-18322.
MLA Song, L.,et al."Improved performance of CsPbBr3 perovskite light-emitting devices by both boundary and interface defects passivation".Nanoscale 10.38(2018):18315-18322.

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

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