中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Light-Emitting Devices Modulated by Multilevel Resistive Memories

文献类型:期刊论文

作者Yang, X.; Shan, C. X.; Liu, Q.; Jiang, M. M.; Lu, Y. J.; Xie, X. H.; Li, B. H.; Shen, D. Z.
刊名Acs Photonics
出版日期2018
卷号5期号:3页码:1006-1011
关键词light-emitting devices resistive random access memories multilevel switching diodes xps emission blue Science & Technology - Other Topics Materials Science Optics Physics
ISSN号2330-4022
DOI10.1021/acsphotonics.7b01310
英文摘要We demonstrate for the first time that multilevel resistive random access memories (RRAMs) can be utilized to modulate the luminescence of light-emitting devices (LEDs) in Au/GaOx/p-GaN/n-ZnO structures. In these structures, Au/GaOx/p-GaN multilevel RRAMs are integrated with p-GaN/n-ZnO LEDs. The injection current of the LEDs can be controlled by the resistance states of the multilevel RRAMs, thus modulating the luminous intensity. The results reported in this paper may offer a route to more integrated and low-cost LED displays. Moreover, our approach may provide a clue for the diversified applications by integrating RRAMs with other functional electronics.
源URL[http://ir.ciomp.ac.cn/handle/181722/61046]  
专题中国科学院长春光学精密机械与物理研究所
推荐引用方式
GB/T 7714
Yang, X.,Shan, C. X.,Liu, Q.,et al. Light-Emitting Devices Modulated by Multilevel Resistive Memories[J]. Acs Photonics,2018,5(3):1006-1011.
APA Yang, X..,Shan, C. X..,Liu, Q..,Jiang, M. M..,Lu, Y. J..,...&Shen, D. Z..(2018).Light-Emitting Devices Modulated by Multilevel Resistive Memories.Acs Photonics,5(3),1006-1011.
MLA Yang, X.,et al."Light-Emitting Devices Modulated by Multilevel Resistive Memories".Acs Photonics 5.3(2018):1006-1011.

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

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