Light-Emitting Devices Modulated by Multilevel Resistive Memories
文献类型:期刊论文
作者 | Yang, X.; Shan, C. X.; Liu, Q.![]() |
刊名 | Acs Photonics
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出版日期 | 2018 |
卷号 | 5期号:3页码:1006-1011 |
关键词 | light-emitting devices resistive random access memories multilevel switching diodes xps emission blue Science & Technology - Other Topics Materials Science Optics Physics |
ISSN号 | 2330-4022 |
DOI | 10.1021/acsphotonics.7b01310 |
英文摘要 | We demonstrate for the first time that multilevel resistive random access memories (RRAMs) can be utilized to modulate the luminescence of light-emitting devices (LEDs) in Au/GaOx/p-GaN/n-ZnO structures. In these structures, Au/GaOx/p-GaN multilevel RRAMs are integrated with p-GaN/n-ZnO LEDs. The injection current of the LEDs can be controlled by the resistance states of the multilevel RRAMs, thus modulating the luminous intensity. The results reported in this paper may offer a route to more integrated and low-cost LED displays. Moreover, our approach may provide a clue for the diversified applications by integrating RRAMs with other functional electronics. |
源URL | [http://ir.ciomp.ac.cn/handle/181722/61046] ![]() |
专题 | 中国科学院长春光学精密机械与物理研究所 |
推荐引用方式 GB/T 7714 | Yang, X.,Shan, C. X.,Liu, Q.,et al. Light-Emitting Devices Modulated by Multilevel Resistive Memories[J]. Acs Photonics,2018,5(3):1006-1011. |
APA | Yang, X..,Shan, C. X..,Liu, Q..,Jiang, M. M..,Lu, Y. J..,...&Shen, D. Z..(2018).Light-Emitting Devices Modulated by Multilevel Resistive Memories.Acs Photonics,5(3),1006-1011. |
MLA | Yang, X.,et al."Light-Emitting Devices Modulated by Multilevel Resistive Memories".Acs Photonics 5.3(2018):1006-1011. |
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