中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Modulating the Surface State of SiC to Control Carrier Transport in Graphene SiC

文献类型:期刊论文

作者Jia, Y. P.; Sun, X. J.; Shi, Z. M.; Jiang, K.; Liu, H. N.; Ben, J. W.; Li, D. B.
刊名Small
出版日期2018
卷号14期号:26页码:7
ISSN号1613-6810
关键词carrier transport graphene KPFM surface states scale epitaxial graphene transistors face frequency charge air Chemistry Science & Technology - Other Topics Materials Science Physics
DOI10.1002/smll.201801273
英文摘要Silicon carbide (SiC) with epitaxial graphene (EG/SiC) shows a great potential in the applications of electronic and photoelectric devices. The performance of devices is primarily dependent on the interfacial heterojunction between graphene and SiC. Here, the band structure of the EG/SiC heterojunction is experimentally investigated by Kelvin probe force microscopy. The dependence of the barrier height at the EG/SiC heterojunction to the initial surface state of SiC is revealed. Both the barrier height and band bending tendency of the heterojunction can be modulated by controlling the surface state of SiC, leading to the tuned carrier transport behavior at the EG/SiC interface. The barrier height at the EG/SiC(000-1) interface is almost ten times that of the EG/SiC(0001) interface. As a result, the amount of carrier transport at the EG/SiC(000-1) interface is about ten times that of the EG/SiC(0001) interface. These results offer insights into the carrier transport behavior at the EG/SiC heterojunction by controlling the initial surface state of SiC, and this strategy can be extended in all devices with graphene as the top layer.
源URL[http://ir.ciomp.ac.cn/handle/181722/61064]  
专题中国科学院长春光学精密机械与物理研究所
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GB/T 7714
Jia, Y. P.,Sun, X. J.,Shi, Z. M.,et al. Modulating the Surface State of SiC to Control Carrier Transport in Graphene SiC[J]. Small,2018,14(26):7.
APA Jia, Y. P..,Sun, X. J..,Shi, Z. M..,Jiang, K..,Liu, H. N..,...&Li, D. B..(2018).Modulating the Surface State of SiC to Control Carrier Transport in Graphene SiC.Small,14(26),7.
MLA Jia, Y. P.,et al."Modulating the Surface State of SiC to Control Carrier Transport in Graphene SiC".Small 14.26(2018):7.

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

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