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Roomerature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si

文献类型:期刊论文

作者Sun, Yi; Zhou, Kun; Feng, Meixin; Li, Zengcheng; Zhou, Yu; Sun, Qian; Liu, Jianping; Zhang, Liqun; Li, Deyao; Sun, Xiaojuan
刊名Light: Science and Applications
出版日期2018
卷号7期号:1
ISSN号20955545
DOI10.1038/s41377-018-0008-y
源URL[http://ir.ciomp.ac.cn/handle/181722/61141]  
专题中国科学院长春光学精密机械与物理研究所
推荐引用方式
GB/T 7714
Sun, Yi,Zhou, Kun,Feng, Meixin,et al. Roomerature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si[J]. Light: Science and Applications,2018,7(1).
APA Sun, Yi.,Zhou, Kun.,Feng, Meixin.,Li, Zengcheng.,Zhou, Yu.,...&Yang, Hui.(2018).Roomerature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si.Light: Science and Applications,7(1).
MLA Sun, Yi,et al."Roomerature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si".Light: Science and Applications 7.1(2018).

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

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