Study of influence of the removal depth of the silicon modification layer on grating structures in reaction-sintered silicon carbide substrate and improvement method
文献类型：期刊论文
| 作者 | Shen, C.; Tan, X.; Jiao, Q. B.; Zhang, W.; Wang, T. T.; Li, W. H.; Wu, N.; Qi, X. D.; Bayan, H. |
| 刊名 | Applied Optics
 |
| 出版日期 | 2018 |
| 卷号 | 57期号:34页码:F1-F7 |
| 关键词 | thermal-oxidation Optics |
| ISSN号 | 1559-128X |
| DOI | 10.1364/ao.57.0000f1 |
| 英文摘要 | The influence of the removal depth of a silicon modification layer on grating structures and mirrors is studied. The removal depth 6-14 mu m is the optimization result for Si-modified reaction-sintered silicon carbide (RS-SiC) used as mirror substrates, but the removal depth 9-12 mu m is the optimization result for Si-modified RS-SiC used as grating substrates. The diffraction efficiency and stray light of the gratings fabricated in the Si-modified RS-SiC substrates with removal depth 9-12 mu m is 90.5%-94% and 5.30 x 10(-7)-5.45 x 10(-7), respectively. Additionally, the number and scale of high-reflection points can be used as the basis for judging the removal depth of the Si-modified RS-SiC used as grating substrates. These results and the regularity have guiding significance for the application of Si-modified RS-SiC as a microstructural substrate. (C) 2018 Optical Society of America |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/61163]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Shen, C.,Tan, X.,Jiao, Q. B.,et al. Study of influence of the removal depth of the silicon modification layer on grating structures in reaction-sintered silicon carbide substrate and improvement method[J]. Applied Optics,2018,57(34):F1-F7. |
| APA | Shen, C..,Tan, X..,Jiao, Q. B..,Zhang, W..,Wang, T. T..,...&Bayan, H..(2018).Study of influence of the removal depth of the silicon modification layer on grating structures in reaction-sintered silicon carbide substrate and improvement method.Applied Optics,57(34),F1-F7. |
| MLA | Shen, C.,et al."Study of influence of the removal depth of the silicon modification layer on grating structures in reaction-sintered silicon carbide substrate and improvement method".Applied Optics 57.34(2018):F1-F7. |
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