Synthesis of Two-Dimensional Alloy Ga0.84In0.16Se Nanosheets for High-Performance Photodetector
文献类型：期刊论文
| 作者 | Yu, M. M.; Li, H.; Liu, H. ; Qin, F. L.; Gao, F.; Hu, Y. X.; Dai, M. J.; Wang, L. F.; Feng, W.; Hu, P. A.
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| 刊名 | Acs Applied Materials & Interfaces
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| 出版日期 | 2018 |
| 卷号 | 10期号:50页码:43299-43304 |
| 关键词 | Ga0.84In1.86Se alloy engineering photodetectors two-dimensional materials III-VI group semiconductors temperature gase inse deposition graphene mobility growth films Science & Technology - Other Topics Materials Science |
| ISSN号 | 1944-8244 |
| DOI | 10.1021/acsami.8b15317 |
| 英文摘要 | The electronic and optoelectronic properties of 2D alloy Ga0.84In0.16Se were investigated for the first time. 2D Ga0.84In0.16Se FETs show p-type conduction behaviors. 2D Ga0.84In0.16Se photodetectors show high photoresponse in the visible light range of 500 to 700 nm. The responsivity value is 258 A/W for alloy photodetector (500 nm illumination), and it is 92 times and 20 times higher than those of 2D GaSe and InSe photodetectors, respectively. Moreover, the alloy photodetector exhibits good photoresponse stability and rapid photoresponse time. Our results demonstrate that 2D alloy Ga0.84In0.16Se has great potential for application in photodetection and sensor devices. |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/61173]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Yu, M. M.,Li, H.,Liu, H.,et al. Synthesis of Two-Dimensional Alloy Ga0.84In0.16Se Nanosheets for High-Performance Photodetector[J]. Acs Applied Materials & Interfaces,2018,10(50):43299-43304. |
| APA | Yu, M. M..,Li, H..,Liu, H..,Qin, F. L..,Gao, F..,...&Hu, P. A..(2018).Synthesis of Two-Dimensional Alloy Ga0.84In0.16Se Nanosheets for High-Performance Photodetector.Acs Applied Materials & Interfaces,10(50),43299-43304. |
| MLA | Yu, M. M.,et al."Synthesis of Two-Dimensional Alloy Ga0.84In0.16Se Nanosheets for High-Performance Photodetector".Acs Applied Materials & Interfaces 10.50(2018):43299-43304. |
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