Transparency Engineering in Quantum Dot-Based Memories
文献类型：期刊论文
| 作者 | Arikan, I. F.; Cottet, N.; Nowozin, T.; Bimberg, D. |
| 刊名 | Physica Status Solidi a-Applications and Materials Science
 |
| 出版日期 | 2018 |
| 卷号 | 215期号:13页码:7 |
| 关键词 | band engineering memory quantum dots resonant tunnel resonant-tunneling current dependence Materials Science Physics |
| ISSN号 | 1862-6300 |
| DOI | 10.1002/pssa.201800018 |
| 英文摘要 | Quantum dot (QD) based memories offer new functionalities as compared to present main stream ones by combining the advantages of DRAM (fast access and write/erase time, good endurance) and Flash memories (long storage time). The present storage times in such memories are demonstrated to be several days at room temperature for GaP-based devices, while write times as short as picoseconds are possible. There exists however a trade-off between storage time and erase time. To eliminate this trade-off, resonant tunneling effects in single or double quantum well structures are studied here as a promising approach. The quantum well structures based on GaAs/Al0.9Ga0.1As and GaP/AlP quantum wells inserted in QD-based memories are designed and simulated using a Schrodinger-Poisson solver and non-equilibrium Green's functions (NEGF) to calculate the transparency at a given voltage. By choosing the width of the quantum wells, precise positioning of their energy levels allows for transparency engineering. Our simulations show an increase in transparency by at least 7 orders of magnitude at resonance, leading indeed to sufficiently fast erase times, thus solving the trade-off problem. |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/61199]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Arikan, I. F.,Cottet, N.,Nowozin, T.,et al. Transparency Engineering in Quantum Dot-Based Memories[J]. Physica Status Solidi a-Applications and Materials Science,2018,215(13):7. |
| APA | Arikan, I. F.,Cottet, N.,Nowozin, T.,&Bimberg, D..(2018).Transparency Engineering in Quantum Dot-Based Memories.Physica Status Solidi a-Applications and Materials Science,215(13),7. |
| MLA | Arikan, I. F.,et al."Transparency Engineering in Quantum Dot-Based Memories".Physica Status Solidi a-Applications and Materials Science 215.13(2018):7. |
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