中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Observation of Gap Opening in 1T ' Phase MoS2 Nanocrystals

文献类型:期刊论文

作者Xu, H.; Han, D.; Bao, Y.; Cheng, F.; Ding, Z. J.; Tan, S. J. R.; Loh, K. P.
刊名Nano Letters
出版日期2018
卷号18期号:8页码:5085-5090
关键词Two-dimensional materials MoSv phase transition quantum spin Hall effect (QSH) scanning tunneling microscopy (STM) single-layer mos2 generalized gradient approximation transition-metal dichalcogenides molybdenum-disulfide nanosheets monolayer stabilization intercalation 1t-mos2 mote2 Chemistry Science & Technology - Other Topics Materials Science Physics
ISSN号1530-6984
DOI10.1021/acs.nanolett.8b01953
英文摘要Two-dimensional (2D) transition metal dichalcogenides (TMDs) manifest in various polymorphs, which deliver different electronic properties; the most prominent among them include the semiconducting 2H phase and metallic 1T (or distorted 1T' phase) phase. Alkali metal intercalation or interface strain has been used to induce semiconductor-to-metal transition in a monolayer MoS2 sheet, leading to exotic quantum states or improved performance in catalysis. However, the direct growth of 1T or 1T' phase MoS2 is challenging due to its metastability. Here, we report MBE growth of isolated 1T' and 2H MoS2 nanocrystals on a Au substrate; these nanocrystals can be differentiated unambiguously by their electronic states using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). By studying the initial stages of nucleation during molecular beam epitaxy (MBE) of MoS2, we could identify atomic clusters (30-50 atoms) with intralayer stacking corresponding to 1T' and 2H separately, which suggests a deterministic growth mechanism from initial nuclei. Furthermore, a topological insulator type behavior was observed for the 1T' MoS2 crystals, where an energy gap opening of 80 meV was measured by STS in the basal plane at 5 K, with the edge of the nanocrystals remaining metallic.
源URL[http://ir.ciomp.ac.cn/handle/181722/61226]  
专题中国科学院长春光学精密机械与物理研究所
推荐引用方式
GB/T 7714
Xu, H.,Han, D.,Bao, Y.,et al. Observation of Gap Opening in 1T ' Phase MoS2 Nanocrystals[J]. Nano Letters,2018,18(8):5085-5090.
APA Xu, H..,Han, D..,Bao, Y..,Cheng, F..,Ding, Z. J..,...&Loh, K. P..(2018).Observation of Gap Opening in 1T ' Phase MoS2 Nanocrystals.Nano Letters,18(8),5085-5090.
MLA Xu, H.,et al."Observation of Gap Opening in 1T ' Phase MoS2 Nanocrystals".Nano Letters 18.8(2018):5085-5090.

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。