Ultraviolet photodetectors based on wide bandgap oxide semiconductor films
文献类型：期刊论文
| 作者 | C.Q.Zhou; Q.Ai; X.Chen; X.H.Gao; K.W.Liu; D.Z.Shen |
| 刊名 | Chinese Physics B
 |
| 出版日期 | 2019 |
| 卷号 | 28期号:4页码:11 |
| 关键词 | Photodetector,ultraviolet,oxide semiconductor film,solar-blind photodetector,msm uv photodetector,thin-film,fast-response,optoelectronic properties,performance enhancement,electrical-properties,schottky contacts,crystal-structure,zno,nanowire,Physics |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/28/4/048503 |
| 英文摘要 | Ultraviolet (UV) photodetectors have attracted more and more attention due to their great potential applications in missile tracking, flame detecting, pollution monitoring, ozone layer monitoring, and so on. Owing to the special characteristics of large bandgap, solution processable, low cost, environmentally friendly, etc., wide bandgap oxide semiconductor materials, such as ZnO, ZnMgO, Ga2O3, TiO2, and NiO, have gradually become a series of star materials in the field of semiconductor UV detection. In this paper, a review is presented on the development of UV photodetectors based on wide bandgap oxide semiconductor films. |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/62738]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | C.Q.Zhou,Q.Ai,X.Chen,et al. Ultraviolet photodetectors based on wide bandgap oxide semiconductor films[J]. Chinese Physics B,2019,28(4):11. |
| APA | C.Q.Zhou,Q.Ai,X.Chen,X.H.Gao,K.W.Liu,&D.Z.Shen.(2019).Ultraviolet photodetectors based on wide bandgap oxide semiconductor films.Chinese Physics B,28(4),11. |
| MLA | C.Q.Zhou,et al."Ultraviolet photodetectors based on wide bandgap oxide semiconductor films".Chinese Physics B 28.4(2019):11. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。