中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Femtosecond pulsed laser induced damage characteristics on Si-based multi-layer film

文献类型:期刊论文

作者C.-B.Zheng; J.-F.Shao; X.-L.Li; H.-L.Wang; C.-R.Wang
刊名Chinese Optics
出版日期2019
卷号12期号:2页码:371-381
关键词Laser damage,Ablation,Electromagnetic pulse,Laser ablation,Laser produced plasmas,Pulsed lasers,Ultrafast lasers
ISSN号20951531
DOI10.3788/CO.20191202.0371
英文摘要In order to understand the ultrafast laser-induced damage mechanisms of typical imaging sensor's film structures, the damage characteristics of Si-based multi-layer films irradiated by a femtosecond pulsed laser were investigated, and the laser pulse fluence ranges and threshold conditions corresponding to various damage phenomena were evaluated. Si-based multi-layer films that were similar in structure of CCD were prepared by electron beam deposition. The damage characteristics of these films irradiated by a femtosecond pulsed laser with wavelength of 800 nm and pulse width of 100 fs under different pulse fluences and numbers were investigated using a metallurgical microscope. Experimental results showed that the laser-affected zone size increased linearly with pulse fluence in the range of 1.01 to 24.7 J/cm2. Surface damage caused by oxidation/amorphization, non-thermal ablation, and laser-induced plasma ablation could be observed in the laser irradiated zone, which tightly depended on the pulse fluence. Multi-layer damage could be observed and the damage probability increased from 1% to 51% in the pulse fluence range from 2.42 to 24.7 J/cm2. Irradiated by sequent pulses at a fluence of 1.01 J/cm2, the laser affected zone remained almost unchanged and the ablated depth increased with the pulse number. From the single pulse damage experiment data, the femtosecond pulse laser-induced surface damage threshold was evaluated to be 0.543 J/cm2 and laser-induced multi-layer stress damage threshold was linearly fitted to be 2.16 J/cm2. Sequent pulse irradiation with low fluence(1.01 J/cm2) also could lead to deep damage on the multi-layer film. 2019, China Science Publishing & Media LTD. All right reserved.
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源URL[http://ir.ciomp.ac.cn/handle/181722/62744]  
专题中国科学院长春光学精密机械与物理研究所
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GB/T 7714
C.-B.Zheng,J.-F.Shao,X.-L.Li,et al. Femtosecond pulsed laser induced damage characteristics on Si-based multi-layer film[J]. Chinese Optics,2019,12(2):371-381.
APA C.-B.Zheng,J.-F.Shao,X.-L.Li,H.-L.Wang,&C.-R.Wang.(2019).Femtosecond pulsed laser induced damage characteristics on Si-based multi-layer film.Chinese Optics,12(2),371-381.
MLA C.-B.Zheng,et al."Femtosecond pulsed laser induced damage characteristics on Si-based multi-layer film".Chinese Optics 12.2(2019):371-381.

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

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