Photoelectric Properties of N Doped MgZnO Thin Films
文献类型：期刊论文
| 作者 | P.-C.Zhao; Z.-Z.Zhang; B.Yao; B.-H.Li; X.-L.Li |
| 刊名 | Faguang Xuebao/Chinese Journal of Luminescence
 |
| 出版日期 | 2019 |
| 卷号 | 40期号:8页码:956-960 |
| 关键词 | Thin films,Carrier mobility,II-VI semiconductors,Light emission,Magnesium,Molecular beam epitaxy,Molecular beams,Nitrogen,Photoelectricity,Sapphire,Semiconductor alloys,Semiconductor doping,Zinc oxide |
| ISSN号 | 10007032 |
| DOI | 10.3788/fgxb20194008.0956 |
| 英文摘要 | ZnO is an excellent UV light-emitting and lasing materials. Nitrogen is considered to be the ideal acceptor dopant for p-type ZnO and MgZnO. However, the lattice integrity of the nitrogen-doped samples grown at the lower growth temperature is remarkably influenced, which results in a further decrease in the carrier mobility of the zinc oxide. In order to study the effect of N doped MgZnO films, N-doped ZnO and MgZnO thin films were grown on sapphire substrate by molecular beam epitaxy. Comparing the difference between N doped MgZnO and ZnO, the experimental results show that the carrier mobility increased significantly when the Mg source temperature was 245 and 255, which is attributed to the fact that Mg-N bonding alleviates the formation of N-N pairs on the oxygen sites and relieves the lattice distortion. At the same time, the donor concentration in N-doped ZnO thin films can be reduced by one order of magnitude when the Mg source temperature is 275, which is advantageous for p-type doping. 2019, Science Press. All right reserved. |
| URL标识 | 查看原文 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/62754]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | P.-C.Zhao,Z.-Z.Zhang,B.Yao,et al. Photoelectric Properties of N Doped MgZnO Thin Films[J]. Faguang Xuebao/Chinese Journal of Luminescence,2019,40(8):956-960. |
| APA | P.-C.Zhao,Z.-Z.Zhang,B.Yao,B.-H.Li,&X.-L.Li.(2019).Photoelectric Properties of N Doped MgZnO Thin Films.Faguang Xuebao/Chinese Journal of Luminescence,40(8),956-960. |
| MLA | P.-C.Zhao,et al."Photoelectric Properties of N Doped MgZnO Thin Films".Faguang Xuebao/Chinese Journal of Luminescence 40.8(2019):956-960. |
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