Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3
文献类型：期刊论文
| 作者 | C.Yang; H.W.Liang; Z.Z.Zhang; X.C.Xia; H.Q.Zhang; R.S.Shen |
| 刊名 | Chinese Physics B
 |
| 出版日期 | 2019 |
| 卷号 | 28期号:4页码:6 |
| 关键词 | Ga2O3 single crystal,solar-blind,photodetector,high temperature,ultraviolet photodetectors,growth,performance,detectors,film,Physics |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/28/4/048502 |
| 英文摘要 | A solar-blind photodetector is fabricated on single crystal Ga2O3 based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultraviolet (UV) transmittance. The quantum efficiency is about 400% at 42 V. The Ga2O3 photodetector shows a sharp cutoff wavelength at 259 nm with high solar-blind/visible (= 3213) and solar-blind/UV (= 834) rejection ratio. Time-resolved photoresponse of the photodetector is investigated at 253-nm illumination from room temperature (RT) to 85.8 degrees C. The photodetector maintains a high reversibility and response speed, even at high temperatures. |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/62894]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | C.Yang,H.W.Liang,Z.Z.Zhang,et al. Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3[J]. Chinese Physics B,2019,28(4):6. |
| APA | C.Yang,H.W.Liang,Z.Z.Zhang,X.C.Xia,H.Q.Zhang,&R.S.Shen.(2019).Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3.Chinese Physics B,28(4),6. |
| MLA | C.Yang,et al."Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3".Chinese Physics B 28.4(2019):6. |
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