Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport
文献类型：期刊论文
| 作者 | D.Wang; D.Han; D.West; N.K.Chen; S.Y.Xie; W.Q.Tian; V.Meunier |
| 刊名 | Npj Computational Materials
 |
| 出版日期 | 2019 |
| 卷号 | 5页码:6 |
| 关键词 | total-energy calculations,mos2,Chemistry,Materials Science |
| ISSN号 | 2057-3960 |
| DOI | 10.1038/s41524-018-0145-0 |
| 英文摘要 | The ionization of dopants is a crucial process for electronics, yet it can be unexpectedly difficult in two-dimensional materials due to reduced screening and dimensionality. Using first-principles calculations, here we propose a dopant ionization process for two-dimensional semiconductors where charge carriers are only excited to a set of defect-bound band edge states, rather than to the true band edge states, as is the case in three-dimensions. These defect-bound states have small enough ionization energies but large enough spatial delocalization. With a modest defect density, carriers can transport through band by such states. |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/63023]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | D.Wang,D.Han,D.West,et al. Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport[J]. Npj Computational Materials,2019,5:6. |
| APA | D.Wang.,D.Han.,D.West.,N.K.Chen.,S.Y.Xie.,...&V.Meunier.(2019).Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport.Npj Computational Materials,5,6. |
| MLA | D.Wang,et al."Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport".Npj Computational Materials 5(2019):6. |
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