Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix
文献类型：期刊论文
| 作者 | P.Steindl; E.M.Sala; B.Alen; D.F.Marron; D.Bimberg |
| 刊名 | Physical Review B
 |
| 出版日期 | 2019 |
| 卷号 | 100期号:19页码:19 |
| 关键词 | single-photon source,temperature-dependence,excitonic recombination,raman-spectra,oxygen donor,gaas,emission,luminescence,photoluminescence,localization,Materials Science,Physics |
| ISSN号 | 2469-9950 |
| DOI | 10.1103/PhysRevB.100.195407 |
| 英文摘要 | The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of Gamma and L quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of k.p theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50-meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/63069]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | P.Steindl,E.M.Sala,B.Alen,et al. Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix[J]. Physical Review B,2019,100(19):19. |
| APA | P.Steindl,E.M.Sala,B.Alen,D.F.Marron,&D.Bimberg.(2019).Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix.Physical Review B,100(19),19. |
| MLA | P.Steindl,et al."Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix".Physical Review B 100.19(2019):19. |
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