中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells

文献类型:期刊论文

作者Y.Song; L.G.Zhang; Y.G.Zeng; Y.Y.Chen; L.Qin; Y.L.Zhou
刊名Materials Research Bulletin
出版日期2019
卷号115页码:196-200
关键词Al0.07Ga0.22In0.71As quantum wells,Optical properties,Metal organic,chemical vapor deposition,Photoluminescence,Full width at half maximum,thermal-expansion,carrier localization,gaas,scattering,origin,model,shift,Materials Science
ISSN号0025-5408
DOI10.1016/j.materresbull.2019.02.027
英文摘要A series of compressively strained AlGaInAs quantum well (QW) structures with different annealing treatment durations at 170 degrees C were investigated by temperature-dependent photoluminescence (PL). An abnormal S-shaped behavior in emission energy and a non-monotone evolution in spectral band width were observed at low temperature. A significant negative linear correlation between full width at half maximum (FWHM) and emission energy at different test temperature was exhibited in samples with different heat treatment durations. The highly linear relation demonstrated that the dependencies and relationships between PL peak energy and FWHM vs temperature are consistent. The anomalous blue shift and concomitant narrowing of FWHM in AlGaInAs QW were affected by lattice strain fluctuations due to the difference of thermal expansion coefficients between adjacent layers and strong carriers' localization at low temperature.
语种英语
源URL[http://ir.ciomp.ac.cn/handle/181722/63072]  
专题中国科学院长春光学精密机械与物理研究所
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Y.Song,L.G.Zhang,Y.G.Zeng,et al. Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells[J]. Materials Research Bulletin,2019,115:196-200.
APA Y.Song,L.G.Zhang,Y.G.Zeng,Y.Y.Chen,L.Qin,&Y.L.Zhou.(2019).Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells.Materials Research Bulletin,115,196-200.
MLA Y.Song,et al."Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells".Materials Research Bulletin 115(2019):196-200.

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

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