Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells
文献类型:期刊论文
作者 | Y.Song; L.G.Zhang; Y.G.Zeng; Y.Y.Chen; L.Qin; Y.L.Zhou |
刊名 | Materials Research Bulletin
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出版日期 | 2019 |
卷号 | 115页码:196-200 |
关键词 | Al0.07Ga0.22In0.71As quantum wells,Optical properties,Metal organic,chemical vapor deposition,Photoluminescence,Full width at half maximum,thermal-expansion,carrier localization,gaas,scattering,origin,model,shift,Materials Science |
ISSN号 | 0025-5408 |
DOI | 10.1016/j.materresbull.2019.02.027 |
英文摘要 | A series of compressively strained AlGaInAs quantum well (QW) structures with different annealing treatment durations at 170 degrees C were investigated by temperature-dependent photoluminescence (PL). An abnormal S-shaped behavior in emission energy and a non-monotone evolution in spectral band width were observed at low temperature. A significant negative linear correlation between full width at half maximum (FWHM) and emission energy at different test temperature was exhibited in samples with different heat treatment durations. The highly linear relation demonstrated that the dependencies and relationships between PL peak energy and FWHM vs temperature are consistent. The anomalous blue shift and concomitant narrowing of FWHM in AlGaInAs QW were affected by lattice strain fluctuations due to the difference of thermal expansion coefficients between adjacent layers and strong carriers' localization at low temperature. |
语种 | 英语 |
源URL | [http://ir.ciomp.ac.cn/handle/181722/63072] ![]() |
专题 | 中国科学院长春光学精密机械与物理研究所 |
推荐引用方式 GB/T 7714 | Y.Song,L.G.Zhang,Y.G.Zeng,et al. Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells[J]. Materials Research Bulletin,2019,115:196-200. |
APA | Y.Song,L.G.Zhang,Y.G.Zeng,Y.Y.Chen,L.Qin,&Y.L.Zhou.(2019).Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells.Materials Research Bulletin,115,196-200. |
MLA | Y.Song,et al."Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells".Materials Research Bulletin 115(2019):196-200. |
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