Avalanche Gain in Metal-Semiconductor-Metal Ga2O3 Solar-Blind Photodiodes
文献类型：期刊论文
| 作者 | B.S.Qiao; Z.Z.Zhang; X.H.Xie; B.H.Li; K.X.Li; X.Chen |
| 刊名 | Journal of Physical Chemistry C
 |
| 出版日期 | 2019 |
| 卷号 | 123期号:30页码:18516-18520 |
| 关键词 | photodetector,transparent,Chemistry,Science & Technology - Other Topics,Materials Science |
| ISSN号 | 1932-7447 |
| DOI | 10.1021/acs.jpcc.9b02608 |
| 英文摘要 | Metal semiconductor-metal structured photodetectors based on beta-Ga2O3 thin films were fabricated. Because of the high dark-resistance and considerable photoconduction, extremely uneven distribution of electric field is formed in the device under solar-blind UV light-illumination when a bias is added. Avalanche multiplication takes place in the high-field area near the electrode edges. Responsivity up to 46 A/W and the corresponding external quantum efficiency of 23 000% are observed. The photodetector shows a peak response at 248 nm, a sharp cut off edge at 262 nm (at -20 dB), and a fast response speed with a fall time of about 26.7 mu s. Because of the ultralow response out of band, the rejection ratio R-254/365nm is larger than 7 orders of magnitude, where the illumination intensity at 254 and 365 nm are 0.5 and 1.2 mW/cm(2), respectively. |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/63114]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | B.S.Qiao,Z.Z.Zhang,X.H.Xie,et al. Avalanche Gain in Metal-Semiconductor-Metal Ga2O3 Solar-Blind Photodiodes[J]. Journal of Physical Chemistry C,2019,123(30):18516-18520. |
| APA | B.S.Qiao,Z.Z.Zhang,X.H.Xie,B.H.Li,K.X.Li,&X.Chen.(2019).Avalanche Gain in Metal-Semiconductor-Metal Ga2O3 Solar-Blind Photodiodes.Journal of Physical Chemistry C,123(30),18516-18520. |
| MLA | B.S.Qiao,et al."Avalanche Gain in Metal-Semiconductor-Metal Ga2O3 Solar-Blind Photodiodes".Journal of Physical Chemistry C 123.30(2019):18516-18520. |
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