Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment
文献类型：期刊论文
| 作者 | X.K.Liu; K.L.Li; X.J.Sun; Z.M.Shi; Z.H.Huang; Z.W.Li; L.Min |
| 刊名 | Journal of Alloys and Compounds
 |
| 出版日期 | 2019 |
| 卷号 | 793页码:599-603 |
| 关键词 | Multilayer MoS2,Al2O3 surface,NH3 treatment,Band alignment,field-effect transistor,layer mos2,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2019.04.227 |
| 英文摘要 | Interface engineering plays a decisive role in the two-dimensional material/high-kappa oxide heterojunction-based devices. In this work, the effects of NH3 plasma interface treatment on the energy band alignment at multilayer MoS2/Al2O3 heterostructures were explored using x-ray photoelectron spectroscopy. A type-I band alignment was formed with valence band offset (VBO) and conduction band offset (CBO) about 3.67 eV and 2.33 eV, respectively. Significantly, the CBO was enlarged by about 0.45 eV after the plasma treatment, which was mainly attributed to the increased separation between the Al 2p core-level energy and valence band maximum. This interesting finding provides a significant guidance for the band adjustment at the interface and further applications of multilayer MoS2 in electronic devices. (C) 2019 Elsevier B.V. All rights reserved. |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/63177]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | X.K.Liu,K.L.Li,X.J.Sun,et al. Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment[J]. Journal of Alloys and Compounds,2019,793:599-603. |
| APA | X.K.Liu.,K.L.Li.,X.J.Sun.,Z.M.Shi.,Z.H.Huang.,...&L.Min.(2019).Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment.Journal of Alloys and Compounds,793,599-603. |
| MLA | X.K.Liu,et al."Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment".Journal of Alloys and Compounds 793(2019):599-603. |
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