中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High temperature characteristics of a 2 m InGaSb/AlGaAsSb passively mode-locked quantum well laser

文献类型:期刊论文

作者X.Li; H.Wang; Z.L.Qiao; X.Guo; W.J.Wang; J.X.B.Sia; G.I.Ng
刊名Applied Physics Letters
出版日期2019
卷号114期号:22页码:4
关键词locking,Physics
ISSN号0003-6951
DOI10.1063/1.5096447
英文摘要A monolithic two-section InGaSb/AlGaAsSb single quantum well mode-locked laser (MLL) emitting at 2m is demonstrated. The laser is able to lase in the continuous wave mode up to 80 degrees C, and passive mode locking operation with a fundamental repetition frequency of approximate to 18.4GHz is observed up to 60 degrees C. The laser has a characteristic temperature T-0 of approximate to 88K near room temperature, which is only slightly affected by the absorber bias voltage (V-a). One consequence of this finding is verified by the temperature-independent power ratios before lasing. The variations of the repetition frequency with gain current (I-g) and temperature (T) have also been systematically investigated. In the bias range in this work, the repetition frequency increases as a whole by more than 30MHz when the temperature is raised from 20 to 40 degrees C. Frequency tuning of approximate to 130 and approximate to 60MHz was observed at 20 and 40 degrees C, respectively. The results and their mechanism analysis provide guidelines for GaSb-based MLLs to better meet the application-required repetition frequencies even with the presence of an unwanted increase in temperature.
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语种英语
源URL[http://ir.ciomp.ac.cn/handle/181722/63243]  
专题中国科学院长春光学精密机械与物理研究所
推荐引用方式
GB/T 7714
X.Li,H.Wang,Z.L.Qiao,et al. High temperature characteristics of a 2 m InGaSb/AlGaAsSb passively mode-locked quantum well laser[J]. Applied Physics Letters,2019,114(22):4.
APA X.Li.,H.Wang.,Z.L.Qiao.,X.Guo.,W.J.Wang.,...&G.I.Ng.(2019).High temperature characteristics of a 2 m InGaSb/AlGaAsSb passively mode-locked quantum well laser.Applied Physics Letters,114(22),4.
MLA X.Li,et al."High temperature characteristics of a 2 m InGaSb/AlGaAsSb passively mode-locked quantum well laser".Applied Physics Letters 114.22(2019):4.

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来源:长春光学精密机械与物理研究所

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