Band alignment of lattice-mismatched In0.82Ga0.18As/InP heterojunction determined by x-ray photoemission spectroscopy
文献类型：期刊论文
| 作者 | J.P.Li; G.Q.Miao; Z.W.Zhang; X.Li; H.Song; H.Jiang; Y.R.Chen |
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 2019 |
| 卷号 | 125期号:10页码:7 |
| 关键词 | quantum-wells,discontinuity,offsets,heterostructures,edge,Physics |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.5079774 |
| 英文摘要 | X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy were used to measure the band structure for high lattice mismatched In0.82Ga0.18As/InP. The valence band offset was determined to be 0.43 eV, which is in agreement with the theoretical values based on the previous analysis. Together with a conduction band offset of 0.44 eV, it is indicated that a type-I band structure forms at the In0.82Ga0.18As/InP heterojunction. The precise determination of the band structure of In0.82Ga0.18As/InP is crucial for future device design and performance improvement. Besides, the valence band offset of In0.82Ga0.18As/GaAs was estimated to be 0.24 eV, which also presents a type-I band alignment. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/63264]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | J.P.Li,G.Q.Miao,Z.W.Zhang,et al. Band alignment of lattice-mismatched In0.82Ga0.18As/InP heterojunction determined by x-ray photoemission spectroscopy[J]. Journal of Applied Physics,2019,125(10):7. |
| APA | J.P.Li.,G.Q.Miao.,Z.W.Zhang.,X.Li.,H.Song.,...&Y.R.Chen.(2019).Band alignment of lattice-mismatched In0.82Ga0.18As/InP heterojunction determined by x-ray photoemission spectroscopy.Journal of Applied Physics,125(10),7. |
| MLA | J.P.Li,et al."Band alignment of lattice-mismatched In0.82Ga0.18As/InP heterojunction determined by x-ray photoemission spectroscopy".Journal of Applied Physics 125.10(2019):7. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。