Effect of strain relaxation on performance of InGaN/GaN green LEDs on 4-inch
文献类型：期刊论文
| 作者 | H.P.Hu; S.J.Zhou; H.Wan; X.T.Liu; N.Li; H.H.Xu |
| 刊名 | Scientific Reports
 |
| 出版日期 | 2019 |
| 卷号 | 9期号:9 |
| 关键词 | light-emitting-diodes,gan,efficiency,stress,aln,Science & Technology - Other Topics |
| ISSN号 | 2045-2322 |
| DOI | 10.1038/s41598-019-40120-9 |
| 英文摘要 | Here we demonstrate high-brightness lnGaN/GaN green light emitting diodes (LEDs) with in-situ low-temperature GaN (LT-GaN) nucleation layer (NL) and ex-situ sputtered AIN NL on 4-inch patterned sapphire substrate. Compared to green LEDs on LT-GaN (19 nm)/sapphire template, green LEDs on sputtered AIN (19 nm)/template has better crystal quality while larger in-plane compressive strain. As a result, the external quantum efficiency (EQE) of green LEDs on sputtered AIN (19 nm)/sapphire template is lower than that of green LEDs on LT-GaN (19 nm)/sapphire template due to strain-induced quantum-confined Stark effect (QCSE). We show that the in-plane compressive strain of green LEDs on sputtered AIN/sapphire templates can be manipulated by changing thickness of the sputtered AIN NL. As the thickness of sputtered AIN NL changes from 19 nm to 40 nm, the green LED on sputtered AIN (33 nm)/sapphire template exhibits the lowest in-plane compressive stress and the highest EQE. At 20A/cm(2), the EQE of 526 nm green LEDs on sputtered AIN (33 nm)/sapphire template is 36.4%, about 6.1% larger than that of the green LED on LT-GaN (19 nm)/sapphire template. Our experimental data suggest that high-efficiency green LEDs can be realized by growing lnGaN/GaN multiple quantum wells (MQWs) on sputtered AIN/sapphire template with reduced in-plane compressive strain and improved crystal quality. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/63325]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | H.P.Hu,S.J.Zhou,H.Wan,et al. Effect of strain relaxation on performance of InGaN/GaN green LEDs on 4-inch[J]. Scientific Reports,2019,9(9). |
| APA | H.P.Hu,S.J.Zhou,H.Wan,X.T.Liu,N.Li,&H.H.Xu.(2019).Effect of strain relaxation on performance of InGaN/GaN green LEDs on 4-inch.Scientific Reports,9(9). |
| MLA | H.P.Hu,et al."Effect of strain relaxation on performance of InGaN/GaN green LEDs on 4-inch".Scientific Reports 9.9(2019). |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。