Effect of crystalline state on conductive filaments forming process in resistive switching memory devices
文献类型：期刊论文
| 作者 | T.Guo; H.Elshekh; Z.Yu; B.Yu; D.Wang; M.S.Kadhim; Y.Z.Chen |
| 刊名 | Materials Today Communications
 |
| 出版日期 | 2019 |
| 卷号 | 20期号:5 |
| 关键词 | Cu(In, Ga)Se-2,Crystalline state,Conductive filaments,Memory device,current-voltage characteristics |
| ISSN号 | 2352-4928 |
| DOI | 10.1016/j.mtcomm.2019.100540 |
| 英文摘要 | It is well known that the resistive switching memory is considered as a promising high-performance storage technology to satisfy the demand of information explosion. In this work, the resistive switching memory device with Ag/Cu(In, Ga)Se-2/Mo structure was firstly fabricated, and further the influence of Cu(In, Ga)S-2 (CIGS) crystalline state on resistive switching performance was investigated. The results show that the HRS/LRS ratio increased from 1.7 to 8.2 as the CIGS layer transferring from amorphous to crystalline, thus the model of crystal state affecting the conducive filament forming process was demonstrated. This work provides an operable method to control the resistive switching performance by tuning the crystal state. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/63354]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | T.Guo,H.Elshekh,Z.Yu,et al. Effect of crystalline state on conductive filaments forming process in resistive switching memory devices[J]. Materials Today Communications,2019,20(5). |
| APA | T.Guo.,H.Elshekh.,Z.Yu.,B.Yu.,D.Wang.,...&Y.Z.Chen.(2019).Effect of crystalline state on conductive filaments forming process in resistive switching memory devices.Materials Today Communications,20(5). |
| MLA | T.Guo,et al."Effect of crystalline state on conductive filaments forming process in resistive switching memory devices".Materials Today Communications 20.5(2019). |
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