Back-to-back Schottky junction photodetectors based on CVD grown CsPbBr3 microcrystalline striped films
文献类型:期刊论文
作者 | D.Cui; C.C.Tian; Y.P.Wang; F.Wang; Z.Yang; J.J.Mei; H.Z.Liu |
刊名 | Aip Advances
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出版日期 | 2019 |
卷号 | 9期号:12页码:7 |
关键词 | perovskites,Science & Technology - Other Topics,Materials Science,Physics |
DOI | 10.1063/1.5114664 |
英文摘要 | In recent years, a new type of lead halide perovskite has attracted a lot of attention for next-generation photodetectors (PDs) with high responsivity, good detectivity, and fast photoresponse speed. Specifically, cesium based all-organic perovskites exhibit better photostability and therefore have achieved increasing success in PDs recently. For reducing the leak current and increasing the response speed of photoconductive PDs, back-to-back Schottky junction PD is designed and fabricated through a direct growth approach of CsPbBr3 microcrystal (MC) films on indium tin oxide (ITO) electrodes by the chemical vapor deposition (CVD) method. Due to the enhanced Schottky barrier height and threshold voltage between CsPbBr3 and ITO electrodes, the PD exhibits the on/off ratio of up to 10(4), peak responsivity of 3.9 AW(-1), detectivity of 3.8 x 10(12), and fast response speed of 0.22 ms (rise time) and 0.45 ms (decay time). In addition, the stability of PD is also enhanced by the high crystal quality of CVD grown CsPbBr3 MCs. |
URL标识 | 查看原文 |
语种 | 英语 |
源URL | [http://ir.ciomp.ac.cn/handle/181722/63426] ![]() |
专题 | 中国科学院长春光学精密机械与物理研究所 |
推荐引用方式 GB/T 7714 | D.Cui,C.C.Tian,Y.P.Wang,et al. Back-to-back Schottky junction photodetectors based on CVD grown CsPbBr3 microcrystalline striped films[J]. Aip Advances,2019,9(12):7. |
APA | D.Cui.,C.C.Tian.,Y.P.Wang.,F.Wang.,Z.Yang.,...&H.Z.Liu.(2019).Back-to-back Schottky junction photodetectors based on CVD grown CsPbBr3 microcrystalline striped films.Aip Advances,9(12),7. |
MLA | D.Cui,et al."Back-to-back Schottky junction photodetectors based on CVD grown CsPbBr3 microcrystalline striped films".Aip Advances 9.12(2019):7. |
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