Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience
文献类型：期刊论文
| 作者 | X.Y.Chen; Z.Z.Zhang; Y.Y.Zhang; B.Yao; B.H.Li; Q.Gong |
| 刊名 | Crystals
 |
| 出版日期 | 2019 |
| 卷号 | 9期号:4页码:7 |
| ISSN号 | 2073-4352 |
| 关键词 | molecular beam epitaxy,ZnO,dopant,defects,x-ray photoelectron,optical-properties,thin-films |
| DOI | 10.3390/cryst9040204 |
| 英文摘要 | Nitrogen-doped ZnO thin films were grown on a-plane Al2O3 by plasma-assisted molecular beam epitaxy. Hall-effect measurements indicated that the nitrogen-doped ZnO films showed p-type behavior first, then n-type, with the growth conditions changing from oxygen-radical-rich to oxygen-radical-deficient ambience, accompanied with the increase of the N/O ratio in the plasmas. The increasing green emission in the low temperature photoluminescence spectra, related to single ionized oxygen vacancy in ZnO, was ascribed to the decrease of active oxygen atoms in the precursor plasmas. CN complex, a donor defect with low formation energy, was demonstrated to be easily introduced into ZnO under O-radical-deficient ambience, which compensated the nitrogen-related acceptor, along with the oxygen vacancy. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/63447]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | X.Y.Chen,Z.Z.Zhang,Y.Y.Zhang,et al. Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience[J]. Crystals,2019,9(4):7. |
| APA | X.Y.Chen,Z.Z.Zhang,Y.Y.Zhang,B.Yao,B.H.Li,&Q.Gong.(2019).Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience.Crystals,9(4),7. |
| MLA | X.Y.Chen,et al."Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience".Crystals 9.4(2019):7. |
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