Narrow linewidth DBR laser based on high order Bragg grating defined by i-line lithography
文献类型：期刊论文
| 作者 | H.Chen; P.Jia; C.Chen; L.Qin; Y.Y.Chen; Y.W.Huang; Y.Q.Ning |
| 刊名 | Optics Communications
 |
| 出版日期 | 2019 |
| 卷号 | 445页码:296-300 |
| 关键词 | Semiconductor laser,Distributed Bragg reflector laser,High-order,grating,Narrow linewidth spectrum,fabry-perot laser |
| ISSN号 | 0030-4018 |
| DOI | 10.1016/j.optcom.2019.03.062 |
| 英文摘要 | In order to obtain narrow linewidth semiconductor laser around 1564 nm, we design a distributed Bragg reflector (DBR) laser with high-order Bragg gratings (HOBGs) using butterfly encapsulation. The DBR laser is fabricated only by i-line lithography technology with grating period of 4. 84 mu m, groove width of 1. 5 mu m and grating length of 72 mu m on a strip width of 4 mu m. The 1mm-long devices achieved an output power of 9.9 mW and a side mode suppression ratio (SMSR) more than 30 dB without facet coating at an injection current of 80 mA. The lasers showed ultra-narrow Lorentz linewidth of 70 kHz. This paper provides a simple method for large-scale production of narrow linewidth semiconductor lasers. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/63460]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | H.Chen,P.Jia,C.Chen,et al. Narrow linewidth DBR laser based on high order Bragg grating defined by i-line lithography[J]. Optics Communications,2019,445:296-300. |
| APA | H.Chen.,P.Jia.,C.Chen.,L.Qin.,Y.Y.Chen.,...&Y.Q.Ning.(2019).Narrow linewidth DBR laser based on high order Bragg grating defined by i-line lithography.Optics Communications,445,296-300. |
| MLA | H.Chen,et al."Narrow linewidth DBR laser based on high order Bragg grating defined by i-line lithography".Optics Communications 445(2019):296-300. |
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