中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
1045 nm purely gain coupled semiconductor laser based on periodic electric injection

文献类型:期刊论文

作者D. Z. Ma, Y. Y. Chen, Y. X. Lei, P. Jia, F. Gao, Y. G. Zeng, L. Liang, Y. Song, C. K. Ruan, X. Liu, L. Qin, Y. Q. Ning and L. J. Wang
刊名Journal of Luminescence
出版日期2020
卷号225页码:7
ISSN号0022-2313
DOI10.1016/j.jlumin.2020.117372
英文摘要Distributed feedback lasers near 1050 nm have many applications such as high resolution imaging in medical, production inspection and 3-D sensing. In this paper, we demonstrate a purely gain coupled distributed feedback laser based on periodic electric injection. By using simple fabrication process steps, the same as those for Fabry–Perot lasers except for periodic current injection windows, we realized lasing single longitude mode in F–P structure due to surface periodic electric injection only. The device operates with a single-mode CW output of 51.9-mW power at 250 mA. The slope efficiency is 0.24 W/A, and the side-mode suppression radio is greater than 35 dB. The spectra maintain good single-mode output characteristics over a tuning range greater than 3.48 nm within only 9 �C.
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语种英语
源URL[http://ir.ciomp.ac.cn/handle/181722/64277]  
专题中国科学院长春光学精密机械与物理研究所
推荐引用方式
GB/T 7714
D. Z. Ma, Y. Y. Chen, Y. X. Lei, P. Jia, F. Gao, Y. G. Zeng, L. Liang, Y. Song, C. K. Ruan, X. Liu, L. Qin, Y. Q. Ning and L. J. Wang. 1045 nm purely gain coupled semiconductor laser based on periodic electric injection[J]. Journal of Luminescence,2020,225:7.
APA D. Z. Ma, Y. Y. Chen, Y. X. Lei, P. Jia, F. Gao, Y. G. Zeng, L. Liang, Y. Song, C. K. Ruan, X. Liu, L. Qin, Y. Q. Ning and L. J. Wang.(2020).1045 nm purely gain coupled semiconductor laser based on periodic electric injection.Journal of Luminescence,225,7.
MLA D. Z. Ma, Y. Y. Chen, Y. X. Lei, P. Jia, F. Gao, Y. G. Zeng, L. Liang, Y. Song, C. K. Ruan, X. Liu, L. Qin, Y. Q. Ning and L. J. Wang."1045 nm purely gain coupled semiconductor laser based on periodic electric injection".Journal of Luminescence 225(2020):7.

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

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