Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates
文献类型：期刊论文
| 作者 | X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen |
| 刊名 | Journal of Alloys and Compounds
 |
| 出版日期 | 2020 |
| 卷号 | 814页码:6 |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2019.152293 |
| 英文摘要 | The effect of AlGaN back-barrier on AlGaN/GaN high electron mobility transistors (HEMTs) using freestanding GaN wafer has been investigated in this work. With the introducing back-barrier structure, the leakage path underneath the buffer (native nitrogen-vacancies and GaOx compounds of the HVPE-grown free-standing GaN surface) layer can be suppressed by lift-up the conduction band. As compared with AlGaN/GaN HEMTs on SiC wafer, AlGaN/GaN HEMTs on free-standing GaN wafer show enhanced drain current ( 700 mA/mm), improved transconductance (143 mS/mm), less current collapse (12%), higher current gain cut-off frequency (13 GHz), and maximum stable gain cut-off frequency (24 GHz), which is attributed to the higher epi quality layer on free-standing GaN wafer. (C) 2019 Elsevier B.V. All rights reserved. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/64304]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen. Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates[J]. Journal of Alloys and Compounds,2020,814:6. |
| APA | X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen.(2020).Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates.Journal of Alloys and Compounds,814,6. |
| MLA | X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen."Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates".Journal of Alloys and Compounds 814(2020):6. |
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