Effect of excessive Cs and O on activation of GaAs(100) surface: From experiment to theory
文献类型：期刊论文
| 作者 | Y. J. Zhang,K. M. Zhang,S. M. Li,S. Li,Y. S. Qian,F. Shi,G. C. Jiao,Z. Miao,Y. L. Guo and Y. G. Zeng |
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 2020 |
| 卷号 | 128期号:17页码:10 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/5.0028042 |
| 英文摘要 | The surface Cs-O activation process directly determines quantum efficiency and stability of negative-electron-affinity photocathodes. To investigate the effects of excessive Cs and O supply on activation and to explore a more effective Cs-O activation recipe, Cs-O activation experiments of GaAs(100) photocathodes are carried out based on the current-driven solid Cs and O dispensers. By a comparison of differences in activation photocurrent, quantum efficiency, and photocurrent decay, it is found that the recipe of excessive O and non-excessive Cs is not suitable for activating GaAs photocathodes, while the recipe of continuous and completely excessive Cs along with intermittent and non-excessive O can achieve the most excellent photoemission performance, including the highest quantum efficiency in the long-wave threshold region and best stability under intense light irradiation after activation. Furthermore, this improved activation recipe with the least Cs-O alternating cycles is easier to operate. Combined with density functional calculations and dipole layer model, it is found that the activation recipe of completely excessive Cs and non-excessive O can form effective dipoles to the greatest extent, and avoid the direct interaction between As atoms and O atoms to form As-O-Ga oxides on the GaAs(100) reconstructed surface. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/64469]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Y. J. Zhang,K. M. Zhang,S. M. Li,S. Li,Y. S. Qian,F. Shi,G. C. Jiao,Z. Miao,Y. L. Guo and Y. G. Zeng. Effect of excessive Cs and O on activation of GaAs(100) surface: From experiment to theory[J]. Journal of Applied Physics,2020,128(17):10. |
| APA | Y. J. Zhang,K. M. Zhang,S. M. Li,S. Li,Y. S. Qian,F. Shi,G. C. Jiao,Z. Miao,Y. L. Guo and Y. G. Zeng.(2020).Effect of excessive Cs and O on activation of GaAs(100) surface: From experiment to theory.Journal of Applied Physics,128(17),10. |
| MLA | Y. J. Zhang,K. M. Zhang,S. M. Li,S. Li,Y. S. Qian,F. Shi,G. C. Jiao,Z. Miao,Y. L. Guo and Y. G. Zeng."Effect of excessive Cs and O on activation of GaAs(100) surface: From experiment to theory".Journal of Applied Physics 128.17(2020):10. |
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