Non-axial N-O-V-Zn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films
文献类型：期刊论文
| 作者 | W. J. Li,H. Zhang,X. Y. Zhang,G. P. Qin,H. L. Li,Y. Q. Xiong,L. J. Ye,H. B. Ruan,C. Z. Tong,C. Y. Kong and L. Fang |
| 刊名 | Applied Surface Science
 |
| 出版日期 | 2020 |
| 卷号 | 529页码:6 |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2020.147168 |
| 英文摘要 | Over the past two decades, there have been numerous reports about the p-type behavior of N-doped ZnO. To date, however, its origin still remains mysterious, especially, N ion-implanted ZnO system. Herein, ZnO films were implanted with 70 keV N ions to a fluence of 1x10(17) cm(-2) at room temperature, followed by annealing in the range of 750-950 degrees C. The obtained p-type ZnO films have a widely hole concentration of 2.87 x 10(15) similar to 2.64 x1016 cm(-3), a mobility of 1.37 similar to 7.27 cm(2)V(-1)s(-1) and a resistivity of 148.3 similar to 299.4 Omega.cm. The thermal evolution of point defects and the possible shallow acceptors in N-implanted ZnO films were further investigated by means of Raman scattering, Photoluminescence (PL) and Electron paramagnetic resonance (EPR). The results show that abundant intrinsic-related defects including zinc interstitials (Zn-i), oxygen vacancies (V-O) and zinc vacancies (V-Zn) were introduced during ion implantation. It is demonstrated that appropriate post-annealing can not only reduce the compensation of donor defects, but also facilitate the formation of N-related shallow acceptor complexes, both of which contribute to the p-type conduction transition of N-implanted ZnO films. The non-axial N-O-V-Zn complexes are proposed to be a kind of potential and stable acceptors in N ion-implanted ZnO films. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/64720]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | W. J. Li,H. Zhang,X. Y. Zhang,G. P. Qin,H. L. Li,Y. Q. Xiong,L. J. Ye,H. B. Ruan,C. Z. Tong,C. Y. Kong and L. Fang. Non-axial N-O-V-Zn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films[J]. Applied Surface Science,2020,529:6. |
| APA | W. J. Li,H. Zhang,X. Y. Zhang,G. P. Qin,H. L. Li,Y. Q. Xiong,L. J. Ye,H. B. Ruan,C. Z. Tong,C. Y. Kong and L. Fang.(2020).Non-axial N-O-V-Zn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films.Applied Surface Science,529,6. |
| MLA | W. J. Li,H. Zhang,X. Y. Zhang,G. P. Qin,H. L. Li,Y. Q. Xiong,L. J. Ye,H. B. Ruan,C. Z. Tong,C. Y. Kong and L. Fang."Non-axial N-O-V-Zn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films".Applied Surface Science 529(2020):6. |
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