Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers
文献类型：期刊论文
| 作者 | D. N. Talwar,H. H. Lin and Z. C. Feng |
| 刊名 | Materials Chemistry and Physics
 |
| 出版日期 | 2020 |
| 卷号 | 252页码:16 |
| ISSN号 | 0254-0584 |
| DOI | 10.1016/j.matchemphys.2020.123279 |
| 英文摘要 | Comprehensive experimental and theoretical studies are reported on the infrared reflectance (IRR)/transmittance (IRT) spectra to empathize the vibrational and structural properties of Si-doped GaN films grown on sapphire substrate using metal-organic chemical vapor deposition technique. Systematic analysis of the IRR/IRT spectra is achieved in the framework of a 4 x 4 transfer matrix methodology by meticulously including both the surface roughness and effective transition layer. With careful simulations, we have demonstrated that it possible to achieve a very good fit to the polarization dependent reflectivity spectra of Si-doped GaN/Sapphire allowing to ascertain film thickness d, charge carrier concentration N, root-mean squared roughness and many other parameters. In the context of Berreman effect, our investigations of IRT spectra for an ultrathin Si-doped GaN film in the oblique geometry has provided a direct evidence of identifying the optical phonons and coupled plasmon-longitudinal-optical phonon modes, in good agreement with the IRR and Raman scattering spectroscopy (RSS) data. From these results, we strongly believe that the measurements of IRT spectra in obliquely incident radiation should be considered as a complementary tool to the RSS for epitomizing doped III-Ns and/or any other ultrathin films of technologically important compound semiconductor materials. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/64797]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | D. N. Talwar,H. H. Lin and Z. C. Feng. Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers[J]. Materials Chemistry and Physics,2020,252:16. |
| APA | D. N. Talwar,H. H. Lin and Z. C. Feng.(2020).Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers.Materials Chemistry and Physics,252,16. |
| MLA | D. N. Talwar,H. H. Lin and Z. C. Feng."Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers".Materials Chemistry and Physics 252(2020):16. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。