Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN
文献类型：期刊论文
| 作者 | K. Jiang,X. J. Sun,J. W. Ben,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,T. Wu,W. Lu and D. B. Li |
| 刊名 | Applied Surface Science
 |
| 出版日期 | 2020 |
| 卷号 | 520页码:9 |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2020.146369 |
| 英文摘要 | AlGaN materials have a great prospect in ultraviolet and deep-ultraviolet optoelectronic devices, while the pointdefects impede their applications. In this report, we successfully suppressed the luminescence of Vcation-related point-defect in AlGaN materials. AlGaN epilayers were grown on AlN/sapphire template by metal-organic chemical vapor deposition and the mixed metal-organic flows were used to pretreat the surface of AlN/sapphire template. The luminescence intensity of (Vcation-complex)2− point-defects was reduced by the pretreatment, demonstrating the favorable suppression effect on the luminescence of (Vcation-complex)2− point-defects. The ephemeral metal-rich condition and metal-droplets on the AlN/sapphire template were believed to be partially responsible for the suppression. It also supported the conception that the 3.90 eV luminescence in AlN originated from the Vcation-related point-defects rather than the CN point-defects. The surface morphology was investigated and an optimized pretreating time of 60 s was obtained. The carrier recombination mechanism was also studied and the results revealed that dislocations not only could act as non-radiative recombination centers, but also could bind the excitons. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/64930]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | K. Jiang,X. J. Sun,J. W. Ben,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,T. Wu,W. Lu and D. B. Li. Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN[J]. Applied Surface Science,2020,520:9. |
| APA | K. Jiang,X. J. Sun,J. W. Ben,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,T. Wu,W. Lu and D. B. Li.(2020).Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN.Applied Surface Science,520,9. |
| MLA | K. Jiang,X. J. Sun,J. W. Ben,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,T. Wu,W. Lu and D. B. Li."Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN".Applied Surface Science 520(2020):9. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。