Thermal evolution and migration behavior of ion-implanted nitrogen in ZnO:In-N films
文献类型：期刊论文
| 作者 | H. Zhang,W. J. Li,G. P. Qin,H. B. Ruan,D. Wang,J. Wang,Z. Huang,F. Wu,C. Y. Kong and L. Fang |
| 刊名 | Applied Surface Science
 |
| 出版日期 | 2020 |
| 卷号 | 509页码:8 |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2019.144793 |
| 英文摘要 | Thermal evolution and migration behavior of nitrogen (N) dopants in indium (In) doped ZnO films implanted with high-dose N ions (ZnO:In-N) were investigated by means of experiment and first-principles calculations. The results demonstrate that N-dopants have poor thermal stability, which has a significant impact on N local chemical states. In particular, two different temperature regions can clearly be distinguished in the annealing process. At low-temperature region, the interaction of substitutional nitrogen (N-o) acceptor and interstitial nitrogen (N-i) starts to occur, which leads to a decrease in N-o acceptor and the formation of additional molecular nitrogen at oxygen site [(N-2)(o)]. In contrast, at high-temperature region, annealing favors energetically the generation of abundant oxygen vacancies near the surface and simultaneously induces the serious out-diffusion of N-dopants. Combined with the calculated migration barriers, oxygen vacancies are deemed to assist the out-diffusion of N-dopants via a vacancy mechanism. This work provides insights into the formation and evolution of different N-related defects and their interaction with intrinsic defects. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/64958]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | H. Zhang,W. J. Li,G. P. Qin,H. B. Ruan,D. Wang,J. Wang,Z. Huang,F. Wu,C. Y. Kong and L. Fang. Thermal evolution and migration behavior of ion-implanted nitrogen in ZnO:In-N films[J]. Applied Surface Science,2020,509:8. |
| APA | H. Zhang,W. J. Li,G. P. Qin,H. B. Ruan,D. Wang,J. Wang,Z. Huang,F. Wu,C. Y. Kong and L. Fang.(2020).Thermal evolution and migration behavior of ion-implanted nitrogen in ZnO:In-N films.Applied Surface Science,509,8. |
| MLA | H. Zhang,W. J. Li,G. P. Qin,H. B. Ruan,D. Wang,J. Wang,Z. Huang,F. Wu,C. Y. Kong and L. Fang."Thermal evolution and migration behavior of ion-implanted nitrogen in ZnO:In-N films".Applied Surface Science 509(2020):8. |
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