TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-nm nMOSFETs: Concerns on the Layout-Dependent Effects
文献类型:期刊论文
作者 | Ren, ZX (Ren, Zhexuan); 1An, X (An, Xia) 1; Li, GS (Li, Gensong) 1; Liu, JY (Liu, Jingyi) 1; Xun, MZ (Xun, Mingzhu) 2; Guo, Q (Guo, Qi) 2; Zhang, X (Zhang, Xing) 1; Huang, R (Huang, Ru) 1 |
刊名 | IEEE TRANSACTIONS ON NUCLEAR SCIENCE |
出版日期 | 2021 |
卷号 | 68期号:8页码:1565-1570 |
ISSN号 | 0018-9499 |
关键词 | 65 nmhot-carrier injection (HCI)layout-dependent effect (LDE)nMOSstressthreshold voltagetotal ionizing dose (TID) |
DOI | 10.1109/TNS.2021.3063137 |
英文摘要 | Layout dependence of total-ionizing-dose (TID) response, hot-carrier degradation (HCD), and radiation-enhanced HCD (REHCD) in 65-nm bulk Si nMOSFETs are experimentally investigated in this article. For TID response, the average irradiation-induced Vth shift slightly increases by several millivolts with increasing gateto-active area spacing (SA), which is contrary to the trend previously observed in pMOSFETs. HCD is much more severe in irradiated devices and the average hot-carrier-stress-induced Vth shift continuously decrease with increasing SA for both irradiated and unirradiated devices, indicating potential better hot-carrier reliability with larger SA. Finally, layout dependence of REHCD is illustrated. REHCD is enhanced with increasing SA, which may reduce the reliability improvement of irradiated devices with larger SA. These layout dependencies are attributed to larger tensile strain in the channel. The results provide early insights into the layout dependence of TID effects and HCD, highlighting potential concerns on the reliability of devices working in radiation environment. |
WOS记录号 | WOS:000687247300007 |
源URL | [http://ir.xjipc.cas.cn/handle/365002/7945] |
专题 | 固体辐射物理研究室 |
作者单位 | 1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China 2.Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China |
推荐引用方式 GB/T 7714 | Ren, ZX ,1An, X ,Li, GS ,et al. TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-nm nMOSFETs: Concerns on the Layout-Dependent Effects[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2021,68(8):1565-1570. |
APA | Ren, ZX .,1An, X .,Li, GS .,Liu, JY .,Xun, MZ .,...&Huang, R .(2021).TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-nm nMOSFETs: Concerns on the Layout-Dependent Effects.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,68(8),1565-1570. |
MLA | Ren, ZX ,et al."TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-nm nMOSFETs: Concerns on the Layout-Dependent Effects".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 68.8(2021):1565-1570. |
入库方式: OAI收割
来源:新疆理化技术研究所
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