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High-efficiency synthesis of large-area monolayer WS2 crystals on SiO2/Si substrate via NaCl-assisted atmospheric pressure chemical vapor deposition

文献类型：期刊论文

作者Shi, Biao2; Zhou, Daming2; Qiu, Risheng3; Bahri, Mohamed1,2; Kong, Xiangdong1,2; Zhao, Hongquan1,2; Tlili, Chaker2; Wang, Deqiang1,2
刊名APPLIED SURFACE SCIENCE
出版日期2020-12-15
卷号533页码:8
ISSN号0169-4332
关键词Monolayer Dual-tube CVD Halide salts Uniformity Raman mapping
DOI10.1016/j.apsusc.2020.147479
通讯作者Tlili, Chaker(chakertlili@cigit.ac.cn) ; Wang, Deqiang(dqwang@cigit.ac.cn)
英文摘要Synthesis of monolayer WS2 crystals on SiO2/Si substrate has attracted interests due to the advantage of fabrication of field effect transistor without WS2 transfer process. Although substantial efforts have been achieved in recent years, controllable synthesis of uniform and large-area monolayer WS2 crystals on SiO2/Si substrate is still challenging. Herein, we report an elegant method to synthesize monolayer WS2 crystals on SiO2/Si substrate by using NaCl as a growth promoter in one semi-sealed quartz tube. It is found that triangular monolayer WS2 with edge lengths ranged from 10 to 460 mu m can be readily synthesized within 5 min of growth by adjusting the growth temperature and weight ratio of NaCl and WO3. The Raman mapping results indicate that the as-synthesized WS2 crystals exhibit homogeneous distributions of the crystallinity, electron doping and residual strain across the entire triangular domains regardless of their dimensions. However, the smaller WS2 crystals exhibit a higher electron doping and less residual strain compared to the larger one obtained under the same growth conditions. Importantly, the amount of WO3 used in this study is three orders lower than the commonly reported one and the semi-sealed quartz tube can be reused more than 50 times after mildly cleaning.
资助项目National Natural Science Foundation of China[61701474] ; Natural Science Foundation of Chongqing, China[cstc2017jcyjAX0320]
WOS研究方向Chemistry ; Materials Science ; Physics
语种英语
出版者ELSEVIER
WOS记录号WOS:000580616900045
源URL[http://119.78.100.138/handle/2HOD01W0/12264]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Tlili, Chaker; Wang, Deqiang
作者单位1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China
3.Chongqing Univ, Coll Mat Sci & Engn, Int Joint Lab Light Alloys, Minist Educ, Chongqing 400044, Peoples R China
推荐引用方式
GB/T 7714		 Shi, Biao,Zhou, Daming,Qiu, Risheng,et al. High-efficiency synthesis of large-area monolayer WS2 crystals on SiO2/Si substrate via NaCl-assisted atmospheric pressure chemical vapor deposition[J]. APPLIED SURFACE SCIENCE,2020,533:8.
APA Shi, Biao.,Zhou, Daming.,Qiu, Risheng.,Bahri, Mohamed.,Kong, Xiangdong.,...&Wang, Deqiang.(2020).High-efficiency synthesis of large-area monolayer WS2 crystals on SiO2/Si substrate via NaCl-assisted atmospheric pressure chemical vapor deposition.APPLIED SURFACE SCIENCE,533,8.
MLA Shi, Biao,et al."High-efficiency synthesis of large-area monolayer WS2 crystals on SiO2/Si substrate via NaCl-assisted atmospheric pressure chemical vapor deposition".APPLIED SURFACE SCIENCE 533(2020):8.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

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