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Atomic-Scale Visualization and Quantification of Configurational Entropy in Relation to Thermal Conductivity: A Proof-of-Principle Study in t-GeSb2Te4

文献类型：期刊论文

作者Chen, Yongjin6,7,8,9,10; Zhang, Bin11; Zhang, Yongsheng12,13; Wu, Hong6,7; Peng, Kunling6,7; Yang, Hengquan6,7; Zhang, Qing8,9; Liu, Xiaopeng6,7,12,13; Chai, Yisheng6,7; Lu, Xu6,7
刊名ADVANCED SCIENCE
出版日期2021-02-08
页码10
关键词configurational entropy single crystalline GeSb2Te4 thermal conductivity
DOI10.1002/advs.202002051
通讯作者Han, Xiaodong(xdhan@bjut.edu.cn) ; Zhou, Xiaoyuan(xiaoyuan2013@cqu.edu.cn)
英文摘要It remains a daunting task to quantify the configurational entropy of a material from atom-revolved electron microscopy images and correlate the results with the material's lattice thermal conductivity, which strides across statics, dynamics, and thermal transport of crystal lattice over orders of magnitudes in length and time. Here, a proof-of-principle study of atomic-scale visualization and quantification of configurational entropy in relation to thermal conductivity in single crystalline trigonal GeSb2Te4 (aka t-GeSb2Te4) with native atomic site disorder is reported. A concerted effort of large t-GeSb2Te4 single crystal growth, in-lab developed analysis procedure of atomic column intensity, the visualization and quantification of configurational entropy including corresponding modulation, and thermal transport measurements enable an entropic "bottom-up" perspective to the lattice thermal conductivity of t-GeSb2Te4. It is uncovered that the configurational entropy increases phonon scattering and reduces phonon mean free path as well as promotes anharmonicity, thereby giving rise to low lattice thermal conductivity and promising thermoelectric performance. The current study sheds lights on an atomic scale bottom-up configurational entropy design in diverse regimes of structural and functional materials research and applications.
资助项目National Natural Science Foundation of China[11674040] ; National Natural Science Foundation of China[11674384] ; National Natural Science Foundation of China[51672270] ; National Natural Science Foundation of China[11874356] ; National Natural Science Foundation of China[51772035] ; National Natural Science Foundation of China[11534015] ; National Natural Science Foundation of China[11474283] ; National Natural Science Foundation of China[11774347] ; National Natural Science Foundation of China[11904039] ; Fundamental Research Funds for the Central Universities[2018CDQYWL0048] ; Fundamental Research Funds for the Central Universities[106112017CDJQJ308821] ; Fundamental Research Funds for the Central Universities[2018CDPTCG0001/26] ; Key Research Program of Frontier Sciences, CAS[QYZDB-SSW-SLH016] ; National Key R&D Program of China[2017YFB0305501] ; National Natural Science Foundation of China (NSFC)[11327901] ; National Natural Science Foundation of China (NSFC)[51471008]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
语种英语
WOS记录号WOS:000615803800001
出版者WILEY
源URL[http://119.78.100.138/handle/2HOD01W0/12958]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Han, Xiaodong; Zhou, Xiaoyuan
作者单位1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100044, Peoples R China
3.Zhejiang Univ, Ctr Electron Microscopy, Hangzhou 310027, Peoples R China
4.Clemson Univ, Dept Phys & Astron, Clemson, SC 29634 USA
5.Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
6.Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
7.Chongqing Univ, Ctr Quantum Mat & Devices, Inst Adv Interdisciplinary Studies, Chongqing 401331, Peoples R China
8.Beijing Univ Technol, Beijing Key Lab, Beijing 100124, Peoples R China
9.Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
10.Ctr High Pressure Sci & Technol Adv Res, Beijing 100094, Peoples R China
推荐引用方式
GB/T 7714		 Chen, Yongjin,Zhang, Bin,Zhang, Yongsheng,et al. Atomic-Scale Visualization and Quantification of Configurational Entropy in Relation to Thermal Conductivity: A Proof-of-Principle Study in t-GeSb2Te4[J]. ADVANCED SCIENCE,2021:10.
APA Chen, Yongjin.,Zhang, Bin.,Zhang, Yongsheng.,Wu, Hong.,Peng, Kunling.,...&Zhou, Xiaoyuan.(2021).Atomic-Scale Visualization and Quantification of Configurational Entropy in Relation to Thermal Conductivity: A Proof-of-Principle Study in t-GeSb2Te4.ADVANCED SCIENCE,10.
MLA Chen, Yongjin,et al."Atomic-Scale Visualization and Quantification of Configurational Entropy in Relation to Thermal Conductivity: A Proof-of-Principle Study in t-GeSb2Te4".ADVANCED SCIENCE (2021):10.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

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