Interface Engineering of a Silicon/Graphene Heterojunction Photodetector via a Diamond-Like Carbon Interlayer
文献类型：期刊论文
| 作者 | Yang, Jun1,2 ; Tang, Linlong2; Luo, Wei2; Feng, Shuanglong2; Leng, Chongqian2; Shi, Haofei2; Wei, Xingzhan1,2
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| 刊名 | ACS APPLIED MATERIALS & INTERFACES
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| 出版日期 | 2021-01-27 |
| 卷号 | 13期号:3页码:4692-4702 |
| 关键词 | silicon/graphene-nanowalls heterojunction photodetector interface engineering diamond-like carbon interlayer |
| ISSN号 | 1944-8244 |
| DOI | 10.1021/acsami.0c18850 |
| 通讯作者 | Shi, Haofei(shi@cigit.ac.cn) ; Wei, Xingzhan(weixingzhan@cigit.ac.cn) |
| 英文摘要 | Silicon/graphene nanowalls (Si/GNWs) heterojunctions with excellent integrability and sensitivity show an increasing potential in optoelectronic devices. However, the performance is greatly limited by inferior interfacial adhesion and week electronic transport caused by the horizontal buffer layer. Herein, a diamond-like carbon (DLC) interlayer is first introduced to construct Si/DLC/GNWs heterojunctions, which can significantly change the growth behavior of the GNWs film, avoiding the formation of horizontal buffer layers. Accordingly, a robust diamond-like covalent bond with a remarkable enhancement of the interfacial adhesion is yielded, which notably improves the complementary metal oxide semiconductor compatibility for photodetector fabrication. Importantly, the DLC interlayer is verified to undergo a graphitization transition during the high-temperature growth process, which is beneficial to pave a vertical conductive path and facilitate the transport of photogenerated carriers in the visible and near-infrared regions. As a result, the Si/DLC/GNWs heterojunction detectors can simultaneously exhibit improved photoresponsivity and response speed, compared with the counterparts without DLC interlayers. The introduction of the DLC interlayer might provide a universal strategy to construct hybrid interfaces with high performance in next-generation optoelectronic devices. |
| 资助项目 | National Key R&D Program of China[2017YFE0131900] ; National Natural Science Foundation of China[NSFC 61504148] ; Natural Science Foundation of Chongqing, China[cstc2020jcyjmsxmX1041] ; Natural Science Foundation of Chongqing, China[cstc2019jcyjjqX0017] ; Natural Science Foundation of Chongqing, China[cstc2020jcyjmsxm3450] |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000614062400117 |
| 出版者 | AMER CHEMICAL SOC |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/13139]  |
| 专题 | 中国科学院重庆绿色智能技术研究院 |
| 通讯作者 | Shi, Haofei; Wei, Xingzhan |
| 作者单位 | 1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, Jun,Tang, Linlong,Luo, Wei,et al. Interface Engineering of a Silicon/Graphene Heterojunction Photodetector via a Diamond-Like Carbon Interlayer[J]. ACS APPLIED MATERIALS & INTERFACES,2021,13(3):4692-4702. |
| APA | Yang, Jun.,Tang, Linlong.,Luo, Wei.,Feng, Shuanglong.,Leng, Chongqian.,...&Wei, Xingzhan.(2021).Interface Engineering of a Silicon/Graphene Heterojunction Photodetector via a Diamond-Like Carbon Interlayer.ACS APPLIED MATERIALS & INTERFACES,13(3),4692-4702. |
| MLA | Yang, Jun,et al."Interface Engineering of a Silicon/Graphene Heterojunction Photodetector via a Diamond-Like Carbon Interlayer".ACS APPLIED MATERIALS & INTERFACES 13.3(2021):4692-4702. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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