The Synthesis of WS2 Atomic Layers under Varying Source-Substrate Distance
文献类型：期刊论文
| 作者 | Huang,Youna1,2; Zhang,Guoxin1,2; Yan,Bing1,2; Ning,Bo1,2; Zhao,Hongquan1,2
|
| 刊名 | Journal of Physics: Conference Series
 |
| 出版日期 | 2021-04-01 |
| 卷号 | 1885期号:3 |
| ISSN号 | 1742-6588 |
| DOI | 10.1088/1742-6596/1885/3/032075 |
| 英文摘要 | Abstract Although monolayer WS2 (Tungsten Disulfide) has attracted many interest, controllable synthesis of large-area WS2 triangles is still challenging. Here, we report salt-assisted CVD growth of WS2 atomic layers using a kind of sandwich structure in a semi-sealed installation and firstly investigate the effect of the width of the hollow (Dss) of the structure. We demonstrated WS2 triangles growth up to 300 μm coverage and showed the effect of hollow on the crystal size. By optimizing the width of the domain, large-area WS2 films were obtained. We utilized optical microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and photoluminescence (PL). Our study provides method to fabricate large area WS2 flakes and the experiment is critical to building scalable devices. |
| 语种 | 英语 |
| WOS记录号 | IOP:1742-6588-1885-3-032075 |
| 出版者 | IOP Publishing |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/13355]  |
| 专题 | 中国科学院重庆绿色智能技术研究院 |
| 作者单位 | 1.University of Chinese Academy of Sciences, Beijing 100064, China 2.Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China |
| 推荐引用方式 GB/T 7714 | Huang,Youna,Zhang,Guoxin,Yan,Bing,et al. The Synthesis of WS2 Atomic Layers under Varying Source-Substrate Distance[J]. Journal of Physics: Conference Series,2021,1885(3). |
| APA | Huang,Youna,Zhang,Guoxin,Yan,Bing,Ning,Bo,&Zhao,Hongquan.(2021).The Synthesis of WS2 Atomic Layers under Varying Source-Substrate Distance.Journal of Physics: Conference Series,1885(3). |
| MLA | Huang,Youna,et al."The Synthesis of WS2 Atomic Layers under Varying Source-Substrate Distance".Journal of Physics: Conference Series 1885.3(2021). |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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