Electrochemical epitaxial (200) PbSe submicron-plates on single-layer graphene for an ultrafast infrared response
文献类型：期刊论文
| 作者 | Yang, Chan1,2; Feng, Shuanglong1 ; Yu, Yinye1,2; Shen, Jun1; Wei, Xingzhan1; Shi, Haofei1
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| 刊名 | JOURNAL OF MATERIALS CHEMISTRY C
 |
| 出版日期 | 2021-04-22 |
| 页码 | 8 |
| ISSN号 | 2050-7526 |
| DOI | 10.1039/d1tc00481f |
| 通讯作者 | Feng, Shuanglong(fengshuanglong@cigit.ac.cn) ; Shi, Haofei(shi@cigit.ac.cn) |
| 英文摘要 | Highly efficient near- and medium-wave infrared detection at room temperature is considered one of the most intensive studies due to the robust detection under foggy weather or other low visibility conditions. 2D atomic layer graphene has an unconventional broad optical spectrum and high electron or hole mobility properties for next-generation electronic and optoelectronic devices. Single-layer graphene has a lower quantum efficiency, and PbSe has a direct narrow bandgap with a highly sensitive infrared response. Here, we examine the growth mechanism of high-quality oriented (200) PbSe crystals on single atomic layer graphene using the electrochemical atomic layer epitaxy (ECALE) method in an aqueous electrolyte. The crystalline phase and density of nucleating seeds controlled by adjusting the electrodeposition parameters are crucial for determining the submicron-crystal geometry. It is revealed that the controllable growth orientation and nucleation of PbSe crystals are realized by combining the underpotential deposition (UPD) of Pb and the overpotential deposition (OPD) of Se. The PbSe crystal/graphene hybrid photodetector indicates the benefit of infrared absorption. An extraordinary response speed of 1.8 ms, a photo-responsivity exceeding 36 A W-1, and a figure-of-merit detectivity of D* > 2.7 x 10(9) Jones have been demonstrated at 2.7 mu m and room temperature, demonstrating its potential for practical optical and optoelectronic applications. |
| 资助项目 | National Natural Science Foundation of China[61605207] ; National Natural Science Foundation of China[61704172] ; National Natural Science Foundation of China[61705229] ; Key R&D plan of the Ministry of Science and Technology[2017YFE0131900] ; Western Light Program of the Chinese Academy of Sciences and Youth Innovation Promotion Association of CAS[2018416] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000648534600001 |
| 出版者 | ROYAL SOC CHEMISTRY |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/13465]  |
| 专题 | 中国科学院重庆绿色智能技术研究院 |
| 通讯作者 | Feng, Shuanglong; Shi, Haofei |
| 作者单位 | 1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Micronano Mfg & Syst Integrat Ctr, Chongqing 400714, Peoples R China 2.Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, Chan,Feng, Shuanglong,Yu, Yinye,et al. Electrochemical epitaxial (200) PbSe submicron-plates on single-layer graphene for an ultrafast infrared response[J]. JOURNAL OF MATERIALS CHEMISTRY C,2021:8. |
| APA | Yang, Chan,Feng, Shuanglong,Yu, Yinye,Shen, Jun,Wei, Xingzhan,&Shi, Haofei.(2021).Electrochemical epitaxial (200) PbSe submicron-plates on single-layer graphene for an ultrafast infrared response.JOURNAL OF MATERIALS CHEMISTRY C,8. |
| MLA | Yang, Chan,et al."Electrochemical epitaxial (200) PbSe submicron-plates on single-layer graphene for an ultrafast infrared response".JOURNAL OF MATERIALS CHEMISTRY C (2021):8. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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